This paper introduces novel 7-T pseudo-CMOS for enhancement mode and 6-T pseudo-CMOS for depletion mode inverter circuit architectures. The designs are built around mono-type of TFTs and consume less power consumption than existing 4-T pseudo-CMOS circuits. In addition, they provide steep transfer curves, along with embedded control for compensation of device parameter variations. Analysis of the transient behavior for the various circuit architectures is presented, providing quantitative insight into capacitive loading taking into account the effects of overlap capacitances.