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Binding energies of trions and biexcitons in two-dimensional semiconductors from diffusion quantum Monte Carlo calculations


Type

Article

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Authors

Szyniszewski, M 
Drummond, ND 
Fal'ko, VI 

Abstract

Excitonic effects play a particularly important role in the optoelectronic behavior of two-dimensional (2D) semiconductors. To facilitate the interpretation of experimental photoabsorption and photoluminescence spectra we provide statistically exact diffusion quantum Monte Carlo binding-energy data for Mott-Wannier models of excitons, trions, and biexcitons in 2D semiconductors. We also provide contact pair densities to allow a description of contact (exchange) interactions between charge carriers using first-order perturbation theory. Our data indicate that the binding energy of a trion is generally larger than that of a biexciton in 2D semiconductors. We provide interpolation formulas giving the binding energy and contact density of 2D semiconductors as functions of the electron and hole effective masses and the in-plane polarizability.

Description

Keywords

cond-mat.mes-hall, cond-mat.mes-hall

Journal Title

Physical Review B

Conference Name

Journal ISSN

2469-9950
2469-9969

Volume Title

95

Publisher

American Physical Society
Sponsorship
European Commission (604391)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (696656)
European Research Council (319277)
This work was supported by EC FP7 Graphene Flagship Project No. CNECTICT-604391, ERC Synergy Grant Hetero2D, EPSRC CDT NOWNANO, and the Simons Foundation. M.S. acknowledges financial support from EPSRC, NOWNANO DTC Grant No. EP/G03737X/1. Computer resources were provided by Lancaster University’s High-End Computing cluster.
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