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dc.contributor.authorSiciliani, de Cumis Uen
dc.contributor.authorWaldie, Joannaen
dc.contributor.authorCroxall, AFen
dc.contributor.authorTaneja, Den
dc.contributor.authorLlandro, Jen
dc.contributor.authorFarrer, Ien
dc.contributor.authorBeere, Harveyen
dc.contributor.authorRitchie, Daviden
dc.date.accessioned2017-02-15T11:00:45Z
dc.date.available2017-02-15T11:00:45Z
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/262528
dc.descriptionCoulomb drag and magnetotransport data from the ambipolar GaAs/AlGaAs 2D bilayer devices described in the associated publication, measured by the authors at the Cavendish Laboratory, University of Cambridge UK, in the period October 2013 to April 2016. The data were measured at low temperature (90 mK to 4 K). The experimental methods are described in the associated publication.en
dc.formatThe data are in a spreadsheet created by Microsoft Excel. This can also be opened using free software such as Open Office or Google Sheets.en
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internationalen
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internationalen
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internationalen
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internationalen
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internationalen
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internationalen
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internationalen
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internationalen
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internationalen
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internationalen
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectsemiconductorsen
dc.subjectGaAs/AlGaAsen
dc.subjectCoulomb dragen
dc.subject2D bilayeren
dc.subjectExcitonsen
dc.subjectQuantum Hall Effecten
dc.subjectAmbipolaren
dc.subjectInteracting electron systemsen
dc.titleData set accompanying the letter "A complete laboratory for transport studies of electron-hole interactions in GaAs/AlGaAs ambipolar bilayers"en
dc.typeDataset
dc.identifier.doi10.17863/CAM.7461
rioxxterms.licenseref.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/http://creativecommons.org/licenses/by-nc-nd/4.0/en
dcterms.formatxlsxen
dc.contributor.orcidWaldie, Joanna [0000-0002-0839-6949]
dc.contributor.orcidBeere, Harvey [0000-0001-5630-2321]
dc.contributor.orcidRitchie, David [0000-0002-9844-8350]
rioxxterms.typeOtheren
pubs.funder-project-idEPSRC (EP/H017720/1)
pubs.funder-project-idEPSRC (EP/J003417/1)
datacite.issupplementto.doi10.1063/1.4976505en


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Attribution-NonCommercial-NoDerivatives 4.0 International
Except where otherwise noted, this item's licence is described as Attribution-NonCommercial-NoDerivatives 4.0 International