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dc.contributor.authorQian, Hen
dc.contributor.authorLee, KBen
dc.contributor.authorVajargah, SHen
dc.contributor.authorNovikov, SVen
dc.contributor.authorGuiney, Ivoren
dc.contributor.authorZaidi, ZHen
dc.contributor.authorJiang, Sen
dc.contributor.authorWallis, Daviden
dc.contributor.authorFoxon, CTen
dc.contributor.authorHumphreys, Colinen
dc.contributor.authorHouston, PAen
dc.date.accessioned2017-05-02T08:58:04Z
dc.date.available2017-05-02T08:58:04Z
dc.date.issued2017-02-01en
dc.identifier.issn0022-0248
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/263927
dc.description.abstractA novel V-groove vertical heterostructure field effect transistor structure is proposed using semi-polar (11-22) GaN. A crystallographic potassium hydroxide self-limiting wet etching technique was developed to enable a damage-free V-groove etching process. An AlGaN/GaN HFET structure was successfully regrown by molecular beam epitaxy on the V-groove surface. A smooth AlGaN/GaN interface was achieved which is an essential requirement for the formation of a high mobility channel.
dc.description.sponsorshipThis work was funded by the Engineering and Physical Sciences Research Council (EPSRC), United Kingdom, under EP/K014471/1 (Silicon Compatible GaN Power Electronics).
dc.languageengen
dc.language.isoenen
dc.publisherElsevier
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectA1. Wet etchingen
dc.subjectA1. Semi-polar (11-22) GaNen
dc.subjectA3. Molecular beam epitaxyen
dc.subjectA3. Metalorganic chemical vapour depositionen
dc.subjectB1. AlGaN/GaNen
dc.subjectB3. Vertical Heterostructure Field E ff ect Transisto (VHFET)en
dc.titleNovel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowthen
dc.typeArticle
prism.endingPage188
prism.publicationDate2017en
prism.publicationNameJournal of Crystal Growthen
prism.startingPage185
prism.volume459en
dc.identifier.doi10.17863/CAM.9303
dcterms.dateAccepted2016-12-07en
rioxxterms.versionofrecord10.1016/j.jcrysgro.2016.12.025en
rioxxterms.versionVoRen
rioxxterms.licenseref.urihttp://creativecommons.org/licenses/by/4.0/en
rioxxterms.licenseref.startdate2017-02-01en
dc.contributor.orcidWallis, David [0000-0002-0475-7583]
dc.contributor.orcidHumphreys, Colin [0000-0001-5053-3380]
dc.identifier.eissn1873-5002
rioxxterms.typeJournal Article/Reviewen
pubs.funder-project-idEPSRC (EP/N01202X/1)
cam.issuedOnline2016-12-08en
cam.orpheus.successThu Jan 30 12:53:57 GMT 2020 - The item has an open VoR version.*
rioxxterms.freetoread.startdate2100-01-01


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Attribution 4.0 International
Except where otherwise noted, this item's licence is described as Attribution 4.0 International