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dc.contributor.authorQian, Hen
dc.contributor.authorLee, KBen
dc.contributor.authorVajargah, SHen
dc.contributor.authorNovikov, SVen
dc.contributor.authorGuiney, Ivoren
dc.contributor.authorZhang, Sen
dc.contributor.authorZaidi, ZHen
dc.contributor.authorJiang, Sen
dc.contributor.authorWallis, Daviden
dc.contributor.authorFoxon, CTen
dc.contributor.authorHumphreys, Colinen
dc.contributor.authorHouston, PAen
dc.date.accessioned2017-05-03T12:37:26Z
dc.date.available2017-05-03T12:37:26Z
dc.date.issued2016-06-01en
dc.identifier.issn0268-1242
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/263985
dc.description.abstractThe structural properties and electrical conduction mechanisms of p-type amorphous GaN$_{1−x}$ As$_{x}$ /n-type crystalline GaN PN junction diodes are presented. A hole concentration of 8.5 × 10$^{19}$ cm$^{-3}$ is achieved which allows a specific contact resistance of 1.3 × 10$^{-4}$ Ω cm$^{2}$. An increased gallium beam equivalent pressure during growth produces reduced resistivity but can result in the formation of a polycrystalline structure. The conduction mechanism is found to be influenced by the crystallinity of the structure. Temperature dependent current voltage characteristics at low forward bias (<0.35 V) show that conduction is recombination dominated in the amorphous structure whereas a transition from tunneling to recombination is observed in the polycrystalline structure. At higher bias, the currents are space charge limited due to the low carrier density in the n-type region. In reverse bias, tunneling current dominates at low bias (<0.3 V) and recombination current becomes dominant at higher reverse bias.
dc.description.sponsorshipThis work was undertaken with support from the EPSRC (EP/K014471/1).
dc.languageengen
dc.language.isoenen
dc.publisherInstitute of Physics
dc.subjectGaNen
dc.subjectPN diodeen
dc.subjectconduction mechanismen
dc.subjectp-type dopingen
dc.subjectamorphous GaNAsen
dc.titleCharacterization of p-GaN$_{1−x}$ As$_{x}$/n-GaN PN junction diodesen
dc.typeArticle
prism.number6en
prism.publicationDate2016en
prism.publicationNameSemiconductor Science and Technologyen
prism.volume31en
dc.identifier.doi10.17863/CAM.9349
dcterms.dateAccepted2016-04-28en
rioxxterms.versionofrecord10.1088/0268-1242/31/6/065020en
rioxxterms.versionAMen
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserveden
rioxxterms.licenseref.startdate2016-06-01en
dc.contributor.orcidWallis, David [0000-0002-0475-7583]
dc.contributor.orcidHumphreys, Colin [0000-0001-5053-3380]
dc.identifier.eissn1361-6641
rioxxterms.typeJournal Article/Reviewen
pubs.funder-project-idEPSRC (EP/E035167/1)
pubs.funder-project-idEPSRC (EP/M010589/1)
pubs.funder-project-idEPSRC (TS/G001383/1)
pubs.funder-project-idEPSRC (EP/N01202X/1)
cam.issuedOnline2016-05-12en
rioxxterms.freetoread.startdate2017-05-12


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