Data supporting "Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth"
Citation
Massabuau, F., Kappers, M., Humphreys, C., & Oliver, R. (2017). Data supporting "Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth" [Dataset]. https://doi.org/10.17863/CAM.9208
Description
Figure 1 Schematic showing the evolution of temperature and carrier gas flux with time during GaN barrier growth when H2/N2 is used (full line) or only N2 (dotted line). Figure 2 10um x 10um AFM scans of samples All N2 (a), All H2/N2 (b), and Half H2/N2 (c). To highlight the variations in prominence of the trench defects across the three samples, a common Z-scale of 15 nm is employed. Figure 3 HAADF-STEM image of the QW stack in sample Half H2/N2, observed along the <11-20> zone-axis. Figure 4 (a) HAADF-STEM image of a typical trench defect in sample Half H2/N2 highlighting the highly disturbed QW stack in the enclosed area, observed along the <11-20> zone-axis. (b) Bright field TEM image of the same region, using g = (1-100) showing the presence of a BSF at the bottom of the trench defects. Figure 5 (a) Weak beam dark field TEM image using g = (1\bar{1}00) showing the presence of a BSF at the bottom half of the QW stack but not connected to a V-shaped ditch in sample Half_H2/N2, observed along the <11\bar{2}0> zone-axis. (b) HAADF-STEM image of the same area showing the undisturbed QW stack grown on top of the BSF.
Format
not applicable
Keywords
III-Nitrides, trench defect, epitaxy, hydrogen
Relationships
Publication Reference: https://doi.org/10.1002/pssb.201600666
Sponsorship
EPSRC (EP/I012591/1)
Identifiers
This record's DOI: https://doi.org/10.17863/CAM.9208
Rights
Attribution 4.0 International, Attribution 4.0 International, Attribution 4.0 International, Attribution 4.0 International, Attribution 4.0 International, Attribution 4.0 International, Attribution 4.0 International, Attribution 4.0 International, Attribution 4.0 International, Attribution 4.0 International, Attribution 4.0 International, Attribution 4.0 International
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