Data supporting "Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth"

Massabuau, Fabien; Kappers, Menno; Humphreys, Colin; Oliver, Rachel

dc.contributor.author	Massabuau, Fabien	en
dc.contributor.author	Kappers, Menno	en
dc.contributor.author	Humphreys, Colin	en
dc.contributor.author	Oliver, Rachel	en
dc.date.accessioned	2017-05-04T08:52:36Z
dc.date.available	2017-05-04T08:52:36Z
dc.identifier.uri	https://www.repository.cam.ac.uk/handle/1810/264018
dc.description	Figure 1 Schematic showing the evolution of temperature and carrier gas flux with time during GaN barrier growth when H2/N2 is used (full line) or only N2 (dotted line). Figure 2 10um x 10um AFM scans of samples All N2 (a), All H2/N2 (b), and Half H2/N2 (c). To highlight the variations in prominence of the trench defects across the three samples, a common Z-scale of 15 nm is employed. Figure 3 HAADF-STEM image of the QW stack in sample Half H2/N2, observed along the <11-20> zone-axis. Figure 4 (a) HAADF-STEM image of a typical trench defect in sample Half H2/N2 highlighting the highly disturbed QW stack in the enclosed area, observed along the <11-20> zone-axis. (b) Bright field TEM image of the same region, using g = (1-100) showing the presence of a BSF at the bottom of the trench defects. Figure 5 (a) Weak beam dark field TEM image using g = (1\bar{1}00) showing the presence of a BSF at the bottom half of the QW stack but not connected to a V-shaped ditch in sample Half_H2/N2, observed along the <11\bar{2}0> zone-axis. (b) HAADF-STEM image of the same area showing the undisturbed QW stack grown on top of the BSF.	en
dc.format	not applicable	en
dc.rights	Attribution 4.0 International	en
dc.rights	Attribution 4.0 International	en
dc.rights	Attribution 4.0 International	en
dc.rights	Attribution 4.0 International	en
dc.rights	Attribution 4.0 International	en
dc.rights	Attribution 4.0 International	en
dc.rights	Attribution 4.0 International	en
dc.rights	Attribution 4.0 International	en
dc.rights	Attribution 4.0 International	en
dc.rights	Attribution 4.0 International	en
dc.rights	Attribution 4.0 International	en
dc.rights	Attribution 4.0 International	en
dc.rights.uri	http://creativecommons.org/licenses/by/4.0/	en
dc.rights.uri	http://creativecommons.org/licenses/by/4.0/	en
dc.rights.uri	http://creativecommons.org/licenses/by/4.0/	en
dc.rights.uri	http://creativecommons.org/licenses/by/4.0/	en
dc.rights.uri	http://creativecommons.org/licenses/by/4.0/	en
dc.rights.uri	http://creativecommons.org/licenses/by/4.0/	en
dc.rights.uri	http://creativecommons.org/licenses/by/4.0/	en
dc.rights.uri	http://creativecommons.org/licenses/by/4.0/	en
dc.rights.uri	http://creativecommons.org/licenses/by/4.0/	en
dc.rights.uri	http://creativecommons.org/licenses/by/4.0/	en
dc.rights.uri	http://creativecommons.org/licenses/by/4.0/	en
dc.rights.uri	http://creativecommons.org/licenses/by/4.0/	en
dc.subject	III-Nitrides	en
dc.subject	trench defect	en
dc.subject	epitaxy	en
dc.subject	hydrogen	en
dc.title	Data supporting "Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth"	en
dc.type	Dataset
dc.identifier.doi	10.17863/CAM.9208
rioxxterms.licenseref.uri	http://creativecommons.org/licenses/by/4.0/http://creativecommons.org/licenses/by/4.0/	en
datacite.contributor.supervisor	Oliver, Rachel A
dcterms.format	png	en
dc.contributor.orcid	Massabuau, Fabien [0000-0003-1008-1652]
dc.contributor.orcid	Humphreys, Colin [0000-0001-5053-3380]
rioxxterms.type	Other	en
pubs.funder-project-id	EPSRC (EP/I012591/1)
datacite.issupplementto.doi	10.1002/pssb.201600666	en