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dc.contributor.authorMassabuau, Fabienen
dc.contributor.authorKappers, Mennoen
dc.contributor.authorHumphreys, Colinen
dc.contributor.authorOliver, Rachelen
dc.date.accessioned2017-05-04T08:52:36Z
dc.date.available2017-05-04T08:52:36Z
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/264018
dc.descriptionFigure 1 Schematic showing the evolution of temperature and carrier gas flux with time during GaN barrier growth when H2/N2 is used (full line) or only N2 (dotted line). Figure 2 10um x 10um AFM scans of samples All N2 (a), All H2/N2 (b), and Half H2/N2 (c). To highlight the variations in prominence of the trench defects across the three samples, a common Z-scale of 15 nm is employed. Figure 3 HAADF-STEM image of the QW stack in sample Half H2/N2, observed along the <11-20> zone-axis. Figure 4 (a) HAADF-STEM image of a typical trench defect in sample Half H2/N2 highlighting the highly disturbed QW stack in the enclosed area, observed along the <11-20> zone-axis. (b) Bright field TEM image of the same region, using g = (1-100) showing the presence of a BSF at the bottom of the trench defects. Figure 5 (a) Weak beam dark field TEM image using g = (1\bar{1}00) showing the presence of a BSF at the bottom half of the QW stack but not connected to a V-shaped ditch in sample Half_H2/N2, observed along the <11\bar{2}0> zone-axis. (b) HAADF-STEM image of the same area showing the undisturbed QW stack grown on top of the BSF.en
dc.formatnot applicableen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectIII-Nitridesen
dc.subjecttrench defecten
dc.subjectepitaxyen
dc.subjecthydrogenen
dc.titleData supporting "Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth"en
dc.typeDataset
dc.identifier.doi10.17863/CAM.9208
rioxxterms.licenseref.urihttp://creativecommons.org/licenses/by/4.0/http://creativecommons.org/licenses/by/4.0/en
datacite.contributor.supervisorOliver, Rachel A
dcterms.formatpngen
dc.contributor.orcidMassabuau, Fabien [0000-0003-1008-1652]
dc.contributor.orcidHumphreys, Colin [0000-0001-5053-3380]
rioxxterms.typeOtheren
pubs.funder-project-idEPSRC (EP/I012591/1)
datacite.issupplementto.doi10.1002/pssb.201600666en


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