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Research data supporting "Reappearance of linear hole transport in an ambipolar undoped GaAs/AlGaAs quantum well"


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Authors

Taneja, D 
Shlimak, I 
Kaveh, M 
Farrer, I 

Description

Low-temperature electrical transport data for an ambipolar field-effect-transistor based on an undoped GaAs/AlGaAs quantum well. The data supports the Journal of Physics: Condensed Matter article, 'Reappearance of linear hole transport in an ambipolar undoped GaAs/AlGaAs quantum well.' The data were collected at the Cavendish Laboratory, University of Cambridge, in the period February 2015 to September 2015.

Version

Software / Usage instructions

The data are contained in five different Origin projects, .opj files readable using the software Originlab or the free software Origin Viewer. In addition, there is a .docx documents containing description about the data.

Keywords

ambipolar, quantum well, GaAs/AlGaAs, linear, hole transport

Publisher

Sponsorship
Engineering and Physical Sciences Research Council (EP/K004077/1)
Engineering and Physical Sciences Research Council (EP/J003417/1)
Engineering and Physical Sciences Research Council (EP/H017720/1)
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