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dc.contributor.authorMagalhães, Sen
dc.contributor.authorFranco, Nen
dc.contributor.authorWatson, IMen
dc.contributor.authorMartin, RWen
dc.contributor.authorO'Donnell, KPen
dc.contributor.authorSchenk, HPDen
dc.contributor.authorTang, Fengzaien
dc.contributor.authorSadler, TCen
dc.contributor.authorKappers, Mennoen
dc.contributor.authorOliver, Rachelen
dc.contributor.authorMonteiro, Ten
dc.contributor.authorMartin, TLen
dc.contributor.authorBagot, PAJen
dc.contributor.authorMoody, MPen
dc.contributor.authorAlves, Een
dc.contributor.authorLorenz, Ken
dc.date.accessioned2017-06-29T10:42:34Z
dc.date.available2017-06-29T10:42:34Z
dc.date.issued2017-04-28en
dc.identifier.issn0022-3727
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/265083
dc.description.abstractIn this work, comparative x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) measurements allow a comprehensive characterization of Al$_{1-x}$In$_x$N thin films grown on GaN. Within the limits of experimental accuracy, and in the compositional range 0.08 < $x$ < 0.28, the lattice parameters of the alloys generally obey Vegard's rule, varying linearly with the InN fraction. Results are also consistent with the small deviation from linear behaviour suggested by Darakchieva $\textit{et al}$ (2008 Appl. Phys. Lett. 93 261908). However, unintentional incorporation of Ga, revealed by atom probe tomography (APT) at levels below the detection limit for RBS, may also affect the lattice parameters. Furthermore, in certain samples the compositions determined by XRD and RBS differ significantly. This fact, which was interpreted in earlier publications as an indication of a deviation from Vegard's rule, may rather be ascribed to the influence of defects or impurities on the lattice parameters of the alloy. The wide-ranging set of Al$_{1-x}$In$_x$N films studied allowed furthermore a detailed investigation of the composition leading to lattice-matching of Al$_{1-x}$In$_x$N/GaN bilayers.
dc.description.sponsorshipFunding by FCT Portugal grants PTDC/FIS/65233/2006 and PTDC/FIS-NAN/0973/2012 is gratefully acknowledged. SM thanks FCT for his post-doc grant SFRH/BPD/98738/2013 and KL for her grant as ‘Investigador FCT’. RAO and FT acknowledge funding from the European Research Council under the European Community’s Seventh Framework Programme (FP7/2007-2013)/ERC grant agreement no 279361 (MACONS). The LEAP 5000 XR was funded by the EPSRC grant EP/M022803/1.
dc.language.isoenen
dc.publisherInstitute of Physics Publishing
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectIII-nitridesen
dc.subjectAlInNen
dc.subjectRBSen
dc.subjectXRDen
dc.subjectatom probe tomographyen
dc.subjectVegard’s ruleen
dc.titleValidity of Vegard’s rule for Al$_{1−x}$In$_x$N (0.08 < $x$ < 0.28) thin films grown on GaN templatesen
dc.typeArticle
prism.number205107en
prism.publicationDate2017en
prism.publicationNameJournal of Physics D - Applied Physicsen
prism.volume50en
dc.identifier.doi10.17863/CAM.10995
dcterms.dateAccepted2017-03-29en
rioxxterms.versionofrecord10.1088/1361-6463/aa69dcen
rioxxterms.versionVoRen
rioxxterms.licenseref.urihttp://creativecommons.org/licenses/by/4.0/en
rioxxterms.licenseref.startdate2017-04-28en
dc.contributor.orcidOliver, Rachel [0000-0003-0029-3993]
dc.identifier.eissn1361-6463
rioxxterms.typeJournal Article/Reviewen
pubs.funder-project-idEuropean Research Council (279361)
pubs.funder-project-idEPSRC (EP/M010589/1)


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Attribution 4.0 International
Except where otherwise noted, this item's licence is described as Attribution 4.0 International