High Performance GaN High Electron Mobility Transistors on Low Resistivity Silicon for X -Band Applications
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Abstract
This letter reports the RF performance of a 0.3-μm gate length AlGaN/AlN/GaN HEMT realized on a 150-mm diameter low-resistivity (LR) (σ <; 10 Ω · cm) silicon substrate. Short circuit current gain (fT) and maximum frequency of oscillation (fMAX) of 55 and 121 GHz, respectively, were obtained. To our knowledge, these are the highest fT/fMAX values reported to date for GaN HEMTs on LR silicon substrates.
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Keywords
AlGaN/GaN HEMTs, low-resistivity Si (111) substrate, amplifier, X-band
Journal Title
IEEE Electron Device Letters
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0741-3106
1558-0563
1558-0563
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36
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IEEE
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This work was supported by the Pump-Priming Scheme–EPSRC National Centre for III–V Technologies.