A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects
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Repository DOI
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Authors
Paun, Maria-Alexandra https://orcid.org/0000-0003-2088-7457
Sallese, Jean-Michel
Kayal, Maher https://orcid.org/0000-0001-5962-174X
Abstract
jats:pIn order to provide the information on their Hall voltage, sensitivity, and drift with temperature, a new simpler lumped circuit model for the evaluation of various Hall cells has been developed. In this sense, the finite element model proposed by the authors in this paper contains both geometrical parameters (dimensions of the cells) and physical parameters such as the mobility, conductivity, Hall factor, carrier concentration, and the temperature influence on them. Therefore, a scalable finite element model in Cadence, for behavior simulation in circuit environment of CMOS Hall effect devices, with different shapes and technologies assessing their performance, has been elaborated.</jats:p>
Description
Keywords
51 Physical Sciences, 5104 Condensed Matter Physics
Journal Title
Advances in Condensed Matter Physics
Conference Name
Journal ISSN
1687-8108
1687-8124
1687-8124
Volume Title
Publisher
Hindawi Limited