Deep Subthreshold TFT Operation and Design Window for Analog Gain Stages
IEEE Journal of the Electron Devices Society
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Cheng, X., Lee, S., & Nathan, A. (2018). Deep Subthreshold TFT Operation and Design Window for Analog Gain Stages. IEEE Journal of the Electron Devices Society, 6 (1), 195-200. https://doi.org/10.1109/JEDS.2018.2789579
The intrinsic gain (Ai), transconductance efficiency (gm/IDS) and cut-off frequency (fT) are analysed for thin film transistors (TFTs) operating in the deep subthreshold region to assess the impact of device variations on the design window for analogue circuits. Results suggest that subthreshold operation could improve the Ai and gm/IDS at the cost of reduced fT and increased sensitivity to bias and process variations. Interestingly, a less steep subthreshold slope (SS) could, to some extent, compensate for these shortcomings, which is in contrast to the general thinking of pursuing a steeper SS in TFT fabrication.
European Commission Horizon 2020 (H2020) Research Infrastructures (RI) (685758)
External DOI: https://doi.org/10.1109/JEDS.2018.2789579
This record's URL: https://www.repository.cam.ac.uk/handle/1810/271146