Deep Subthreshold TFT Operation and Design Window for Analog Gain Stages
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Peer-reviewed
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Abstract
The intrinsic gain (Ai), transconductance efficiency (gm/IDS) and cut-off frequency (fT) are analysed for thin film transistors (TFTs) operating in the deep subthreshold region to assess the impact of device variations on the design window for analogue circuits. Results suggest that subthreshold operation could improve the Ai and gm/IDS at the cost of reduced fT and increased sensitivity to bias and process variations. Interestingly, a less steep subthreshold slope (SS) could, to some extent, compensate for these shortcomings, which is in contrast to the general thinking of pursuing a steeper SS in TFT fabrication.
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Keywords
TFT, analog circuits, subthreshold operation, low power
Journal Title
IEEE Journal of the Electron Devices Society
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Journal ISSN
2168-6734
2168-6734
2168-6734
Volume Title
6
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
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Sponsorship
European Commission Horizon 2020 (H2020) Research Infrastructures (RI) (685758)
European Commission Horizon 2020 (H2020) Marie Sk?odowska-Curie actions (645760)
European Commission Horizon 2020 (H2020) Marie Sk?odowska-Curie actions (645760)