Show simple item record

dc.contributor.authorOrava, J
dc.contributor.authorWen, Y
dc.contributor.authorPrikryl, J
dc.contributor.authorWagner, T
dc.contributor.authorStelmashenko, NA
dc.contributor.authorChen, M
dc.contributor.authorGreer, AL
dc.date.accessioned2018-02-05T11:33:58Z
dc.date.available2018-02-05T11:33:58Z
dc.date.issued2017
dc.identifier.issn0957-4522
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/271642
dc.description.abstract© 2017, The Author(s). Atom-probe tomography of Ag-photodoped amorphous thin-film Ge 40 S 60 , the material of interest in nano-ionic memory and lateral geometry MEMS technologies, reveals regions with two distinct compositions on a nanometer length-scale. One type of region is Ag-rich and of a size typically extending beyond the measured sample volume of ~40 × 40 × 80 nm 3 . These type-I regions contain aligned nanocolumns, ~5 nm wide, that are the likely location for reversible diffusion of Ag + ions and associated growth/dissolution of conducting filaments. The nanocolumns become relatively Ag-rich during the photodoping, and the pattern of Ag enrichment originates from the columnar-porous structure of the as-deposited film that is to some extent preserved in the electrolyte after photodoping. Type-II regions have lower Ag content, are typically 10–20 nm across, and appear to conform to the usual description of the photoreaction products of the optically-induced dissolution and diffusion of silver in a thin-film chalcogenide. The microstructure, with two types of region and aligned nanocolumns, is present in the electrolyte after photodoping without any applied bias, and is important for understanding switching mechanisms, and writing and erasing cycles, in programmable-metallization-cell memory.
dc.publisherSpringer Science and Business Media LLC
dc.rightsAttribution 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.titlePreferred location for conducting filament formation in thin-film nano-ionic electrolyte: study of microstructure by atom-probe tomography
dc.typeArticle
prism.endingPage6851
prism.issueIdentifier9
prism.publicationDate2017
prism.publicationNameJournal of Materials Science: Materials in Electronics
prism.startingPage6846
prism.volume28
dc.identifier.doi10.17863/CAM.18636
dcterms.dateAccepted2017-01-13
rioxxterms.versionofrecord10.1007/s10854-017-6383-y
rioxxterms.versionVoR
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserved
rioxxterms.licenseref.startdate2017-05-01
dc.contributor.orcidOrava, J [0000-0002-4036-5069]
dc.identifier.eissn1573-482X
rioxxterms.typeJournal Article/Review
cam.issuedOnline2017-02-02


Files in this item

Thumbnail
Thumbnail

This item appears in the following Collection(s)

Show simple item record

Attribution 4.0 International
Except where otherwise noted, this item's licence is described as Attribution 4.0 International