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dc.contributor.authorRoberts, Jen
dc.contributor.authorJarman, Johnen
dc.contributor.authorJohnstone, Duncanen
dc.contributor.authorMidgley, Paulen
dc.contributor.authorChalker, Pen
dc.contributor.authorOliver, Rachelen
dc.contributor.authorMassabuau, Fabienen
dc.date.accessioned2018-02-13T10:26:07Z
dc.date.available2018-02-13T10:26:07Z
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/273172
dc.descriptionFigure 1. (a) 2θ-ω scan recorded around the α-Al2O3 0006 reflection. Rocking curve ω scans recorded on the (b) α-Ga2O3 0006 and (c) α-Ga2O3 10-14 reflections. RSMs around the (d) α-Al2O3 0006 and (e) α-Al2O3 10-110 reflections. Figure 2. (a) ADF-STEM and (b) HR-TEM image of the sample observed along the α-Al2O3 ⟨11-20⟩ zone-axis. In inset, ABSF-filtered (average background subtraction filter) image of the interface region indicated with a square in (b). Figure 3. SED of the Ga2O3 film observed near the α-Al2O3 ⟨11-20⟩ zone-axis. (a) Composite diffraction contrast image formed plotting the intensity of selected reflections as a function of probe position. Green corresponds to reflections in the α-Ga2O3 ⟨11-20⟩ zone-axis pattern and red corresponds to additional reflections identified in the data. Inset shows the intensity of the direct beam revealing the full extent of the film including non-diffracting components. Representative diffraction patterns (b) from the α-Ga2O3 columns, (c-d) from the tips which are most likely ε-Ga2O3.en
dc.formatimage viewer, Epitaxyen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectGallium oxideen
dc.subjectSemiconductoren
dc.subjectAtomic layer depositionen
dc.subjectX-ray diffractionen
dc.subjectScanning electron diffractionen
dc.titleResearch data supporting "α-Ga2O3 grown by low temperature atomic layer deposition on sapphire"en
dc.typeDataset
dc.identifier.doi10.17863/CAM.18837
rioxxterms.licenseref.urihttp://creativecommons.org/licenses/by/4.0/en
dcterms.format.tiff .xrdmlen
dc.contributor.orcidJarman, John [0000-0001-8095-8603]
dc.contributor.orcidJohnstone, Duncan [0000-0003-3663-3793]
dc.contributor.orcidMidgley, Paul [0000-0002-6817-458X]
dc.contributor.orcidOliver, Rachel [0000-0003-0029-3993]
dc.contributor.orcidMassabuau, Fabien [0000-0003-1008-1652]
rioxxterms.typeOtheren
pubs.funder-project-idEuropean Research Council (279361)
datacite.issupplementto.doi10.1016/j.jcrysgro.2018.02.014en
datacite.issupplementto.urlhttps://www.repository.cam.ac.uk/handle/1810/275111


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Except where otherwise noted, this item's licence is described as Attribution 4.0 International