Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors.
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Peer-reviewed
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Abstract
Hydrogen is known to be present as an impurity in amorphous oxide semiconductors at the 0.1% level. Using amorphous ZnO as a simplified model system, we show that the hydrogens pair up at oxygen vacancies in the amorphous network, where they form metal-H-metal bridge bonds. These bonds are shown to create filled defect gap states lying just above the valence band edge and they are shown to give a consistent mechanism to explain the negative bias illumination stress instability found in oxide semiconductors like In-Ga-Zn-O (IGZO).
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0912 Materials Engineering
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2045-2322
2045-2322
2045-2322
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7
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Springer Science and Business Media LLC
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Engineering and Physical Sciences Research Council (EP/P005152/1)