Proximity induced superconductivity in indium gallium arsenide quantum wells
Journal of Magnetism and Magnetic Materials
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Delfanazari, K., Puddy, R., Ma, P., Yi, T., Cao, M., Gul, Y., Farrer, I., et al. (2017). Proximity induced superconductivity in indium gallium arsenide quantum wells. Journal of Magnetism and Magnetic Materials https://doi.org/10.1016/j.jmmm.2017.10.057
We report on the experimental observation of the proximity induced superconductivity in an indium gallium arsenide (In0.75Ga0.25As) quantum well. The Josephson junction was fabricated by several photo-lithographic processes on an InGaAs heterojunction and Niobium (Nb) was used as superconducting electrodes. Owing to the Andreev reflections and Andreev bound states at the Nb-In0.75Ga0.25As quantum well-Nb interfaces, the subharmonic energy gap structures (SGS) are observed at the differential conductance (dI/dV) versus voltage (V) plots when the applied source-drain bias voltages satisfy the expression VSD = 2Δ/ne. The dI/dV as a function of applied magnetic field B shows a maximum at zero B which decreases by increasing B. When decreasing B to below ±0.4 T, a hysteresis and shift of the conductance maxima close to B = 0 T are observed. Our results help to pave the way to the development of integrated coherent quantum circuitry.
Is supplemented by: https://doi.org/10.17863/CAM.13774
Authors acknowledge financial support from EPSRC grant numbers EP/M009505/1 and EP/J017671/1. K. Delfanazari is grateful to Dr. H. Asai for helpful discussions.
UNIVERSITY COLLEGE LONDON (FB EPSRC) (EP/K004077/1)
UNIVERSITY COLLEGE LONDON (FB EPSRC) (EP/J017671/1)
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External DOI: https://doi.org/10.1016/j.jmmm.2017.10.057
This record's URL: https://www.repository.cam.ac.uk/handle/1810/273577
Attribution 4.0 International
Licence URL: http://creativecommons.org/licenses/by/4.0/
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