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dc.contributor.authorShe, Xiao-Jianen
dc.contributor.authorGustafsson, Daviden
dc.contributor.authorSirringhaus, Henningen
dc.date.accessioned2018-02-28T18:46:27Z
dc.date.available2018-02-28T18:46:27Z
dc.date.issued2017-02en
dc.identifier.issn0935-9648
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/273644
dc.description.abstractA new device architecture for fast organic transistor memory is developed, based on a vertical organic transistor configuration incorporating high-performance ambipolar conjugated polymers and unipolar small molecules as the transport layers, to achieve reliable and fast programming and erasing of the threshold voltage shift in less than 200 ns.
dc.description.sponsorshipX.J.S. thanks the Cambridge Overseas Trust and Chinese Scholarship Council for PhD funding.
dc.format.mediumPrint-Electronicen
dc.languageengen
dc.publisherWiley
dc.titleA Vertical Organic Transistor Architecture for Fast Nonvolatile Memory.en
dc.typeArticle
prism.issueIdentifier8en
prism.publicationDate2017en
prism.publicationNameAdvanced materials (Deerfield Beach, Fla.)en
prism.volume29en
dc.identifier.doi10.17863/CAM.12056
dcterms.dateAccepted2016-10-05en
rioxxterms.versionofrecord10.1002/adma.201604769en
rioxxterms.versionAM*
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserveden
rioxxterms.licenseref.startdate2017-02en
dc.contributor.orcidShe, Xiao-Jian [0000-0002-9032-6084]
dc.contributor.orcidSirringhaus, Henning [0000-0001-9827-6061]
dc.identifier.eissn1521-4095
rioxxterms.typeJournal Article/Reviewen
rioxxterms.freetoread.startdate2018-12-22


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