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A critical review on the contributions of chemical and physical factors toward the nucleation and growth of large-area graphene

Published version
Peer-reviewed

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Authors

Ani, MH 
Ramlan, AH 
Ismail, E 
Sirat, MS 

Abstract

Since the first isolation of graphene over a decade ago, research into graphene has exponentially increased due to its excellent electrical, optical, mechanical and chemical properties. Graphene has been shown to enhance the performance of various electronic devices. In addition, graphene can be simply produced through chemical vapor deposition (CVD). Although the synthesis of graphene has been widely researched, especially the CVD growth method, the lack of understanding of various synthetic parameters still limits the fabrication of large-area and defect-free graphene films. This report critically reviews various parameters affecting the quality of CVD grown graphene to understand the relationship between these parameters and thechoice of metal substrates and to provide a point of reference for future studies of large-area, CVD-grown graphene.

Description

Keywords

40 Engineering, 4018 Nanotechnology

Journal Title

Journal of Materials Science

Conference Name

Journal ISSN

0022-2461
1573-4803

Volume Title

53

Publisher

Springer Science and Business Media LLC