α-Ga<inf>2</inf>O<inf>3</inf> grown by low temperature atomic layer deposition on sapphire

Roberts, JW; Jarman, JC; Johnstone, DN; Midgley, PA; Chalker, PR; Oliver, RA; Massabuau, FCP

α-Ga2O3 grown by low temperature atomic layer deposition on sapphire

Accepted version

Peer-reviewed

Repository URI

https://www.repository.cam.ac.uk/handle/1810/275111

Repository DOI

https://doi.org/10.17863/CAM.22288

Files

Accepted version (850.34 KB)

Type

Article

Authors

Roberts, JW

Jarman, JC

Johnstone, DN

Midgley, PA

Chalker, PR

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Keywords

Semiconducting gallium compounds, Oxides, Atomic layer epitaxy, X-ray diffraction, Scanning electron diffraction

Journal Title

Journal of Crystal Growth

Journal ISSN

0022-0248
1873-5002

Volume Title

487

Publisher

Elsevier BV

Publisher DOI

https://doi.org/10.1016/j.jcrysgro.2018.02.014

Rights

Attribution-NonCommercial-NoDerivatives 4.0 International

Sponsorship

European Research Council (279361)
European Research Council (291522)
Engineering and Physical Sciences Research Council (EP/M010589/1)
Engineering and Physical Sciences Research Council (EP/L015978/1)

Collections

Scholarly Works - Materials Science and Metallurgy