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dc.contributor.authorRoberts, JWen
dc.contributor.authorJarman, Johnen
dc.contributor.authorJohnstone, Duncanen
dc.contributor.authorMidgley, Paulen
dc.contributor.authorChalker, PRen
dc.contributor.authorOliver, Rachelen
dc.contributor.authorMassabuau, Fabienen
dc.date.accessioned2018-04-23T10:39:47Z
dc.date.available2018-04-23T10:39:47Z
dc.date.issued2018-04-01en
dc.identifier.issn0022-0248
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/275111
dc.publisherNorth-Holland
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.titleα-Ga<inf>2</inf>O<inf>3</inf> grown by low temperature atomic layer deposition on sapphireen
dc.typeArticle
prism.endingPage27
prism.publicationDate2018en
prism.publicationNameJournal of Crystal Growthen
prism.startingPage23
prism.volume487en
dc.identifier.doi10.17863/CAM.22288
rioxxterms.versionofrecord10.1016/j.jcrysgro.2018.02.014en
rioxxterms.versionAM*
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserveden
rioxxterms.licenseref.startdate2018-04-01en
dc.contributor.orcidJarman, John [0000-0001-8095-8603]
dc.contributor.orcidJohnstone, Duncan [0000-0003-3663-3793]
dc.contributor.orcidMidgley, Paul [0000-0002-6817-458X]
dc.contributor.orcidMassabuau, Fabien [0000-0003-1008-1652]
dc.identifier.eissn1873-5002
rioxxterms.typeJournal Article/Reviewen
pubs.funder-project-idEuropean Research Council (279361)
pubs.funder-project-idEuropean Research Council (291522)
pubs.funder-project-idEPSRC (EP/M010589/1)
pubs.funder-project-idEPSRC (EP/L015978/1)
rioxxterms.freetoread.startdate2019-02-08


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Attribution-NonCommercial-NoDerivatives 4.0 International
Except where otherwise noted, this item's licence is described as Attribution-NonCommercial-NoDerivatives 4.0 International