Strain engineering of the silicon-vacancy center in diamond
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Authors
Meesala, S
Sohn, YI
Pingault, B
Shao, L
Atikian, HA
Holzgrafe, J
Gündoǧan, M
Stavrakas, Camille
Sipahigil, A
Chia, C
Evans, R
Burek, MJ
Zhang, M
Wu, L
Pacheco, JL
Abraham, J
Bielejec, E
Lukin, MD
Atatüre, M
Lončar, M
Publication Date
2018-05-29Journal Title
Physical Review B
ISSN
2469-9950
Publisher
American Physical Society
Volume
97
Issue
20
Type
Article
This Version
AM
Metadata
Show full item recordCitation
Meesala, S., Sohn, Y., Pingault, B., Shao, L., Atikian, H., Holzgrafe, J., Gündoǧan, M., et al. (2018). Strain engineering of the silicon-vacancy center in diamond. Physical Review B, 97 (20)https://doi.org/10.1103/PhysRevB.97.205444
Abstract
We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multi-qubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain suseptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.
Sponsorship
Leverhulme Trust (RPG-2013-337)
EC FP7 MC ITN (289795)
UNIVERSITY OF OXFORD (FB EPSRC) (EP/M013243/1)
EPSRC (1498341)
Identifiers
External DOI: https://doi.org/10.1103/PhysRevB.97.205444
This record's URL: https://www.repository.cam.ac.uk/handle/1810/275196
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