Low-Loss 800-V Lateral IGBT in Bulk Si Technology Using a Floating Electrode
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An 800V rated lateral Insulated Gate Bipolar Transistor (LIGBT) for high frequency, low-cost applications is proposed. This LIGBT features a new method of adjusting the bipolar gain by using floating N+ and P+ regions connected by a floating electrode in front of the P+ collector. This floating structure lowers the injection efficiency at the collector side of the device, resulting in a very significant decrease in the turn-off time and substantially lower turn-off losses. The device was fabricated in a 0.5µm bulk silicon CMOS technology at a commercial foundry without additional processing steps or process optimisation. Tests on fabricated devices showed equivalent Rdson below 70m.cm2 at 125oC with switching times as low as 250ns at 125oC. The novel LIGBT device showed avalanche capability and low gate capacitance and was used for the first time, in an AC/DC converter operating at 200kHz allowing significant improvements in performance, compactness and reduced component count.
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1558-0563
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Engineering and Physical Sciences Research Council (EP/P024947/1)
Engineering and Physical Sciences Research Council (EP/L007010/1)
Engineering and Physical Sciences Research Council (EP/S019367/1)
Engineering and Physical Sciences Research Council (EP/R00661X/1)