Repository logo
 

Low-Loss 800-V Lateral IGBT in Bulk Si Technology Using a Floating Electrode

Accepted version
Peer-reviewed

Type

Article

Change log

Abstract

An 800V rated lateral Insulated Gate Bipolar Transistor (LIGBT) for high frequency, low-cost applications is proposed. This LIGBT features a new method of adjusting the bipolar gain by using floating N+ and P+ regions connected by a floating electrode in front of the P+ collector. This floating structure lowers the injection efficiency at the collector side of the device, resulting in a very significant decrease in the turn-off time and substantially lower turn-off losses. The device was fabricated in a 0.5µm bulk silicon CMOS technology at a commercial foundry without additional processing steps or process optimisation. Tests on fabricated devices showed equivalent Rdson below 70m.cm2 at 125oC with switching times as low as 250ns at 125oC. The novel LIGBT device showed avalanche capability and low gate capacitance and was used for the first time, in an AC/DC converter operating at 200kHz allowing significant improvements in performance, compactness and reduced component count.

Description

Keywords

Floating electrode, injection control, LIGBT, bulk silicon, power device, lateral, IGBT

Journal Title

IEEE Electron Device Letters

Conference Name

Journal ISSN

0741-3106
1558-0563

Volume Title

39

Publisher

Institute of Electrical and Electronics Engineers (IEEE)
Sponsorship
Engineering and Physical Sciences Research Council (EP/K035304/1)
Engineering and Physical Sciences Research Council (EP/P024947/1)
Engineering and Physical Sciences Research Council (EP/L007010/1)
Engineering and Physical Sciences Research Council (EP/S019367/1)
Engineering and Physical Sciences Research Council (EP/R00661X/1)