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dc.contributor.authorNikolic, Aleksandaren
dc.contributor.authorZhang, Kexinen
dc.contributor.authorBarnes, Crispinen
dc.date.accessioned2018-09-21T12:37:29Z
dc.date.available2018-09-21T12:37:29Z
dc.date.issued2018-06-13en
dc.identifier.issn1361-648X
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/280601
dc.description.abstractIn this article we describe the bulk and interface quantum states of electrons in multi-layer heterostructures in one dimension, consisting of topological insulators (TIs) and topologically trivial materials. We use and extend an effective four-band continuum Hamiltonian by introducing position dependence to the eight material parameters of the Hamiltonian. We are able to demonstrate complete conduction-valence band mixing in the interface states. We find evidence for topological features of bulk states of multi-layer TI heterostructures, as well as demonstrating both complete and incomplete conduction-valence band inversion at different bulk state energies. We show that the linear k z terms in the low-energy Hamiltonian, arising from overlap of p z orbitals between different atomic layers in the case of chalcogenides, control the amount of tunneling from TIs to trivial insulators. Finally, we show that the same linear k z terms in the low-energy Hamiltonian affect the material's ability to form the localised interface state, and we demonstrate that due to this effect the spin and probability density localisation in a thin film of Sb2Te3 is incomplete. We show that changing the parameter that controls the magnitude of the overlap of p z orbitals affects the transport characteristics of the topologically conducting states, with incomplete topological state localisation resulting in increased backscattering.
dc.languageengen
dc.publisherIOP Publishing
dc.rightsAttribution 4.0 International*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/*
dc.titleBulk and interface quantum states of electrons in multi-layer heterostructures with topological materials.en
dc.typeArticle
prism.issueIdentifier23en
prism.number235001en
prism.publicationDate2018en
prism.publicationNameJournal of Physics Condensed Matteren
prism.volume30en
dc.identifier.doi10.17863/CAM.27969
dcterms.dateAccepted2018-04-27en
rioxxterms.versionofrecord10.1088/1361-648X/aac0b1en
rioxxterms.versionVoR*
rioxxterms.licenseref.urihttp://creativecommons.org/licenses/by/4.0/en
rioxxterms.licenseref.startdate2018-06-13en
dc.contributor.orcidBarnes, Crispin [0000-0001-7337-7245]
dc.identifier.eissn1361-648X
rioxxterms.typeJournal Article/Reviewen
pubs.funder-project-idEPSRC (1208945)
cam.issuedOnline2018-05-15en
dc.identifier.urlhttp://iopscience.iop.org/article/10.1088/1361-648X/aac0b1/metaen
cam.orpheus.successThu Jan 30 10:54:22 GMT 2020 - The item has an open VoR version.*
rioxxterms.freetoread.startdate2100-01-01


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Attribution 4.0 International
Except where otherwise noted, this item's licence is described as Attribution 4.0 International