Show simple item record

dc.contributor.authorChoi, FS
dc.contributor.authorGriffiths, JT
dc.contributor.authorRen, C
dc.contributor.authorLee, KB
dc.contributor.authorZaidi, ZH
dc.contributor.authorHouston, PA
dc.contributor.authorGuiney, I
dc.contributor.authorHumphreys, CJ
dc.contributor.authorOliver, RA
dc.contributor.authorWallis, DJ
dc.date.accessioned2018-10-03T04:44:46Z
dc.date.available2018-10-03T04:44:46Z
dc.date.issued2018
dc.identifier.issn0021-8979
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/283069
dc.description.abstractControl of leakage currents in the buffer layers of GaN based transistors on Si substrates is vital for the demonstration of high performance devices. Here, we show that the growth conditions during the metal organic chemical vapour deposition growth of the graded AlGaN strain relief layers (SRLs) can significantly influence the vertical leakage. Using scanning capacitance microscopy, secondary ion mass spectrometry, and transmission electron microscopy, we investigate the origins of leakage paths and show that they result from the preferential incorporation of oxygen impurities on the side wall facets of the inverted hexagonal pyramidal pits which can occur during the growth of the graded AlGaN SRL. We also show that when 2D growth of the AlGaN SRL is maintained a significant increase in the breakdown voltage can be achieved even in much thinner buffer layer structures. These results demonstrate the importance of controlling the morphology of the high electron mobility transistor buffer layer as even at a very low density the leakage paths identified would provide leakage paths in large area devices.
dc.description.sponsorshipThis work was funded by the Engineering and Physical Sciences Research Council under Grant Code Nos. EP/K014471/1 and EP/N01202X/1 and the European Research Council under the European Community's Seventh Framework Programme Grant Agreement No. 279361 (MACONS).
dc.publisherAIP Publishing
dc.rightsAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.titleVertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers
dc.typeArticle
prism.issueIdentifier5
prism.publicationDate2018
prism.publicationNameJournal of Applied Physics
prism.volume124
dc.identifier.doi10.17863/CAM.30431
dcterms.dateAccepted2018-07-19
rioxxterms.versionofrecord10.1063/1.5027680
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserved
rioxxterms.licenseref.startdate2018-08-07
dc.contributor.orcidChoi, FS [0000-0001-6907-9317]
dc.contributor.orcidGriffiths, JT [0000-0002-1198-1372]
dc.contributor.orcidZaidi, ZH [0000-0002-2088-6166]
dc.contributor.orcidHumphreys, CJ [0000-0001-5053-3380]
dc.contributor.orcidOliver, RA [0000-0003-0029-3993]
dc.identifier.eissn1089-7550
rioxxterms.typeJournal Article/Review
pubs.funder-project-idEPSRC (via University of Glasgow) (Project 67613)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/N01202X/1)
pubs.funder-project-idEuropean Research Council (279361)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/M010589/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/N017927/1)
pubs.funder-project-idEPSRC (via Cardiff University) (513956)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/P024947/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/S019367/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/R00661X/1)
cam.issuedOnline2018-08-03


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record

Attribution 4.0 International
Except where otherwise noted, this item's licence is described as Attribution 4.0 International