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dc.contributor.authorLophitis, N
dc.contributor.authorAntoniou, Marina
dc.contributor.authorVemulapati, U
dc.contributor.authorVobecky, J
dc.contributor.authorBadstuebner, U
dc.contributor.authorWikstroem, T
dc.contributor.authorStiasny, T
dc.contributor.authorRahimo, M
dc.contributor.authorUdrea, Florin
dc.date.accessioned2018-10-10T05:19:49Z
dc.date.available2018-10-10T05:19:49Z
dc.date.issued2018-09
dc.identifier.issn0741-3106
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/283462
dc.description.abstractThe Bi-mode Gate Commutated Thyristor (BGCT) is an advanced reverse conducting device aiming high power applications. Due to the high degree of interdigitation of diode parts and Gate Commutated Thyristor (GCT) parts, it is necessary to investigate how to best separate the two and at the same time, how to maximise the individual power handling capability. This work underpins the latter, for the GCT part. In achieving that, this letter details the optimisation direction, identifies the design parameters that influence the Maximum Controllable Current (MCC) and thereafter introduces a new design attribute, the “p-zone”. This new design not only improves the MCC at high temperature, but also at low temperature, yielding temperature independent current handling capability and at least 1000 A, or 23.5 % of improvement compared to the state-of-the-art. As a result, the proposed design constitutes an enabler for optimally designed bi-mode devices rated at least 5000 A for applications with the highest power requirement.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.titleOptimal gate commutated thyristor design for bi-mode gate commutated thyristors underpinning high, temperature independent, current controllability
dc.typeArticle
prism.endingPage1345
prism.issueIdentifier9
prism.publicationDate2018
prism.publicationNameIEEE Electron Device Letters
prism.startingPage1342
prism.volume39
dc.identifier.doi10.17863/CAM.30829
rioxxterms.versionofrecord10.1109/LED.2018.2847050
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserved
rioxxterms.licenseref.startdate2018-09-01
dc.contributor.orcidLophitis, N [0000-0002-0901-0876]
dc.contributor.orcidAntoniou, Marina [0000-0002-7544-3784]
dc.contributor.orcidVobecky, J [0000-0002-2078-2244]
dc.contributor.orcidRahimo, M [0000-0002-4632-5463]
dc.contributor.orcidUdrea, Florin [0000-0002-7288-3370]
dc.identifier.eissn1558-0563
rioxxterms.typeJournal Article/Review
rioxxterms.freetoread.startdate2019-09-01


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