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Passivating the sulfur vacancy in monolayer MoS2

Published version
Peer-reviewed

Type

Article

Change log

Authors

Lu, Haichang 
Kummel, Andrew 
Robertson, John 

Abstract

jats:pVarious methods to passivate the sulfur vacancy in 2D MoS2 are modeled using density functional theory (DFT) to understand the passivation mechanism at an atomic scale. First, the organic super acid, bis(trifluoromethane)sulfonimide (TFSI) is a strong protonating agent, and it is experimentally found to greatly increase the photoluminescence efficiency. DFT simulations find that the effectiveness of passivation depends critically on the charge state and number of hydrogens donated by TFSI since this determines the symmetry of the defect complex. A symmetrical complex is formed by three hydrogen atoms bonding to the defect in a −1 charge state, and this gives no bandgap states and a Fermi level in the midgap. However, a charge state of +1 gives a lower symmetry complex with one state in the gap. One or two hydrogens also give complexes with gap states. Second, passivation by O2 can provide partial passivation by forming a bridge bond across the S vacancy, but it leaves a defect state in the lower bandgap. On the other hand, substitutional additions do not shift the vacancy states out of the gap.</jats:p>

Description

Keywords

5108 Quantum Physics, 51 Physical Sciences, 5104 Condensed Matter Physics

Journal Title

APL MATERIALS

Conference Name

Journal ISSN

2166-532X
2166-532X

Volume Title

6

Publisher

AIP Publishing
Sponsorship
Engineering and Physical Sciences Research Council (EP/P005152/1)