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dc.contributor.authorLi, H
dc.contributor.authorGuo, Y
dc.contributor.authorRobertson, John
dc.date.accessioned2018-11-13T00:30:44Z
dc.date.available2018-11-13T00:30:44Z
dc.date.issued2018-07-25
dc.identifier.issn2475-9953
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/284961
dc.description.abstractHydrogen is known to be present as an impurity in amorphous oxide semiconductors at the 0.1% level. The behavior of hydrogen and oxygen vacancies in amorphous In-Ga-Zn-O is studied using density functional supercell calculations. We show that the hydrogens pair up at oxygen vacancies in the amorphous network, where they form metal-H-metal bridge bonds. These bonds are shown to create filled defect gap states lying just above the valence band edge, infrared modes at about 1400 and 1520cm−1, and they are shown to give a consistent mechanism to explain the negative bias illumination stress instability found in oxide semiconductors such as In-Ga-Zn-O (IGZO).
dc.description.sponsorshipThe authors acknowledge funding from EPSRC Grants No. EP/P005152/1.
dc.publisherAmerican Physical Society (APS)
dc.titleOxygen vacancies and hydrogen in amorphous In-Ga-Zn-O and ZnO
dc.typeArticle
prism.issueIdentifier7
prism.publicationDate2018
prism.publicationNamePhysical Review Materials
prism.volume2
dc.identifier.doi10.17863/CAM.32332
rioxxterms.versionofrecord10.1103/PhysRevMaterials.2.074601
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserved
rioxxterms.licenseref.startdate2018-07-25
dc.identifier.eissn2475-9953
rioxxterms.typeJournal Article/Review
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/P005152/1)
cam.issuedOnline2018-07-25
rioxxterms.freetoread.startdate2019-07-25


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