Temperature Effects in the Band Structure of Topological Insulators.
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Publication Date
2016-11-25Journal Title
Phys Rev Lett
ISSN
0031-9007
Publisher
American Physical Society (APS)
Volume
117
Issue
22
Pages
226801-226801
Language
eng
Type
Article
Metadata
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Monserrat Sanchez, B., & Vanderbilt, D. (2016). Temperature Effects in the Band Structure of Topological Insulators.. Phys Rev Lett, 117 (22), 226801-226801. https://doi.org/10.1103/PhysRevLett.117.226801
Abstract
We study the effects of temperature on the band structure of the Bi_{2}Se_{3} family of topological insulators using first-principles methods. Increasing temperature drives these materials towards the normal state, with similar contributions from thermal expansion and from electron-phonon coupling. The band gap changes with temperature reach 0.3 eV at 600 K, of similar size to the changes caused by electron correlation. Our results suggest that temperature-induced topological phase transitions should be observable near critical points of other external parameters.
Identifiers
External DOI: https://doi.org/10.1103/PhysRevLett.117.226801
This record's URL: https://www.repository.cam.ac.uk/handle/1810/285506
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