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dc.contributor.authorMonserrat Sanchez, Bartomeu
dc.contributor.authorVanderbilt, David
dc.date.accessioned2018-11-21T00:30:30Z
dc.date.available2018-11-21T00:30:30Z
dc.date.issued2016-11-25
dc.identifier.issn0031-9007
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/285506
dc.description.abstractWe study the effects of temperature on the band structure of the Bi_{2}Se_{3} family of topological insulators using first-principles methods. Increasing temperature drives these materials towards the normal state, with similar contributions from thermal expansion and from electron-phonon coupling. The band gap changes with temperature reach 0.3 eV at 600 K, of similar size to the changes caused by electron correlation. Our results suggest that temperature-induced topological phase transitions should be observable near critical points of other external parameters.
dc.languageeng
dc.publisherAmerican Physical Society (APS)
dc.titleTemperature Effects in the Band Structure of Topological Insulators.
dc.typeArticle
prism.endingPage226801
prism.issueIdentifier22
prism.publicationDate2016
prism.publicationNamePhys Rev Lett
prism.startingPage226801
prism.volume117
dc.identifier.doi10.17863/CAM.32864
dcterms.dateAccepted2016-09-23
rioxxterms.versionofrecord10.1103/PhysRevLett.117.226801
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserved
rioxxterms.licenseref.startdate2016-11-25
dc.contributor.orcidMonserrat Sanchez, Bartomeu [0000-0002-4233-4071]
dc.identifier.eissn1079-7114
rioxxterms.typeJournal Article/Review
cam.issuedOnline2016-11-22
rioxxterms.freetoread.startdate2017-11-22


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