Antiferroelectric Topological Insulators in Orthorhombic AMgBi Compounds (A=Li, Na, K).
Bennett, Joseph W
Rabe, Karin M
Physical Review Letters
American Physical Society
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Monserrat Sanchez, B., Bennett, J. W., Rabe, K. M., & Vanderbilt, D. (2017). Antiferroelectric Topological Insulators in Orthorhombic AMgBi Compounds (A=Li, Na, K).. Physical Review Letters, 119 (3), 036802-036802. https://doi.org/10.1103/PhysRevLett.119.036802
We introduce antiferroelectric topological insulators as a new class of functional materials in which an electric field can be used to control topological order and induce topological phase transitions. Using first principles methods, we predict that several alkali-MgBi orthorhombic members of an ABC family of compounds are antiferroelectric topological insulators. We also show that epitaxial strain and hydrostatic pressure can be used to tune the topological order and the band gap of these ABC compounds. Antiferroelectric topological insulators could enable precise control of topology using electric fields, enhancing the applicability of topological materials in electronics and spintronics.
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External DOI: https://doi.org/10.1103/PhysRevLett.119.036802
This record's URL: https://www.repository.cam.ac.uk/handle/1810/285507