Antiferroelectric Topological Insulators in Orthorhombic AMgBi Compounds (A=Li, Na, K).
Authors
Monserrat, Bartomeu
Bennett, Joseph W
Rabe, Karin M
Vanderbilt, David
Publication Date
2017-07-21Journal Title
Physical Review Letters
ISSN
0031-9007
Publisher
American Physical Society
Volume
119
Issue
3
Pages
036802-036802
Language
eng
Type
Article
Metadata
Show full item recordCitation
Monserrat, B., Bennett, J. W., Rabe, K. M., & Vanderbilt, D. (2017). Antiferroelectric Topological Insulators in Orthorhombic AMgBi Compounds (A=Li, Na, K).. Physical Review Letters, 119 (3), 036802-036802. https://doi.org/10.1103/PhysRevLett.119.036802
Abstract
We introduce antiferroelectric topological insulators as a new class of functional materials in which an electric field can be used to control topological order and induce topological phase transitions. Using first principles methods, we predict that several alkali-MgBi orthorhombic members of an ABC family of compounds are antiferroelectric topological insulators. We also show that epitaxial strain and hydrostatic pressure can be used to tune the topological order and the band gap of these ABC compounds. Antiferroelectric topological insulators could enable precise control of topology using electric fields, enhancing the applicability of topological materials in electronics and spintronics.
Keywords
0912 Materials Engineering
Embargo Lift Date
2100-01-01
Identifiers
External DOI: https://doi.org/10.1103/PhysRevLett.119.036802
This record's URL: https://www.repository.cam.ac.uk/handle/1810/285507
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