Exciton recombination at crystal-phase quantum rings in GaAs/In<inf>x</inf>Ga<inf>1-x</inf>As core/multishell nanowires
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Authors
Corfdir, P
Lewis, RB
Marquardt, O
Grandal, J
Dimakis, E
Geelhaar, L
Publication Date
2016-08-22Journal Title
Applied Physics Letters
ISSN
0003-6951
Publisher
AIP Publishing
Volume
109
Issue
8
Type
Article
Metadata
Show full item recordCitation
Corfdir, P., Lewis, R., Marquardt, O., Küpers, H., Grandal, J., Dimakis, E., Trampert, A., et al. (2016). Exciton recombination at crystal-phase quantum rings in GaAs/In<inf>x</inf>Ga<inf>1-x</inf>As core/multishell nanowires. Applied Physics Letters, 109 (8) https://doi.org/10.1063/1.4961245
Abstract
© 2016 Author(s). We study the optical properties of coaxial GaAs/InxGa1-xAs core/multishell nanowires with x between 0.2 and 0.4 at 10 K. The evolution of the photoluminescence energy of the InxGa1-xAs quantum well shell with x and shell thickness agrees with the result of 8-band k·p calculations, demonstrating that the shell growth is pseudomorphic. At low excitation power, the photoluminescence from the shell is dominated by the recombination of exciton states deeply localized within the shell. We show that these states are associated with crystal-phase quantum rings that form at polytype segments of the InxGa1-xAs quantum well shell.
Sponsorship
Fonds National Suisse de la Recherche Scientifique Project No. 161032.
Deutsche Forschungsgemeinschaft (Grant No. Ge2224/2-2)
EPSRC (Grant No. EP/C009200/01)
Funder references
EPSRC (EP/C009290/1)
Identifiers
External DOI: https://doi.org/10.1063/1.4961245
This record's URL: https://www.repository.cam.ac.uk/handle/1810/285512
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