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dc.contributor.authorLi, Huanglong
dc.contributor.authorXu, Xintong
dc.contributor.authorZhang, Yi
dc.contributor.authorGillen, Roland
dc.contributor.authorShi, Luping
dc.contributor.authorRobertson, John
dc.date.accessioned2018-11-22T00:33:30Z
dc.date.available2018-11-22T00:33:30Z
dc.date.issued2018-07-19
dc.identifier.issn2045-2322
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/285701
dc.description.abstractBi2O2Se is an emerging semiconducting, air-stable layered material (Nat. Nanotechnol. 2017, 12, 530; Nano Lett. 2017, 17, 3021), potentially exceeding MoS2 and phosphorene in electron mobility and rivalling typical Van der Waals stacked layered materials in the next-generation high-speed and low-power electronics. Holding the promise of functional versatility, it is arousing rapidly growing interest from various disciplines, including optoelectronics, thermoelectronics and piezoelectronics. In this work, we comprehensively study the electrical properties of the native point defects in Bi2O2Se, as an essential step toward understanding the fundamentals of this material. The defect landscapes dependent on both Fermi energy and the chemical potentials of atomic constituents are investigated. Along with the bulk defect analysis, a complementary inspection of the surface properties, within the simple context of charge neutrality level model, elucidates the observed n-type characteristics of Bi2O2Se based FETs. This work provides important guide to engineer the defects of Bi2O2Se for desired properties, which is key to the successful application of this emerging layered material27.
dc.format.mediumElectronic
dc.languageeng
dc.publisherSpringer Science and Business Media LLC
dc.rightsAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.titleNative point defects of semiconducting layered Bi2O2Se.
dc.typeArticle
prism.issueIdentifier1
prism.publicationDate2018
prism.publicationNameSci Rep
prism.startingPage10920
prism.volume8
dc.identifier.doi10.17863/CAM.33051
dcterms.dateAccepted2018-07-10
rioxxterms.versionofrecord10.1038/s41598-018-29385-8
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserved
rioxxterms.licenseref.startdate2018-07-19
dc.contributor.orcidGillen, Roland [0000-0002-7913-0953]
dc.identifier.eissn2045-2322
rioxxterms.typeJournal Article/Review
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/P005152/1)
cam.issuedOnline2018-07-19


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Attribution 4.0 International
Except where otherwise noted, this item's licence is described as Attribution 4.0 International