Improvement of single photon emission from InGaN QDs embedded in porous micropillars
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Authors
Springbett, HP
Gao, K
Jarman, J
Zhu, T
Holmes, M
Arakawa, Y
Oliver, RA
Journal Title
Applied Physics Letters
ISSN
1077-3118
Publisher
AIP
Type
Article
Metadata
Show full item recordCitation
Springbett, H., Gao, K., Jarman, J., Zhu, T., Holmes, M., Arakawa, Y., & Oliver, R. (2018). Improvement of single photon emission from InGaN QDs embedded in porous micropillars. Applied Physics Letters https://doi.org/10.1063/1.5045843
Abstract
In many InGaN/GaN single photon emitting structures, significant contamination of the single photon stream by background emission is observed. Here, utilizing InGaN/GaN quantum dots incorporated in
mesoporous distributed Bragg reflectors within micropillars, we
demonstrate methods for the reduction of this contamination. Using the resulting devices, autocorrelation measurements were performed using
an HBT set-up and thus we report a working quantum dot device in the III-nitride system utilizing mesoporous DBRs. Uncorrected g(2)(0) autocorrelation values are shown to be significantly improved
when excited with a laser at longer wavelengths and lower powers. Through this optimization, we report a g(2)(0) value from a blue-emitting InGaN/GaN quantum dot of 0.126 ± 0.003 without any form
of background correction.
Sponsorship
Engineering and Physical Sciences Research Council (EP/M011682/1)
Identifiers
External DOI: https://doi.org/10.1063/1.5045843
This record's URL: https://www.repository.cam.ac.uk/handle/1810/285755
Rights
Licence:
http://www.rioxx.net/licenses/all-rights-reserved
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