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Quantifying defects in graphene via Raman spectroscopy at different excitation energies.

Accepted version
Peer-reviewed

Type

Article

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Authors

Cançado, LG 
Jorio, A 
Ferreira, EH Martins 
Stavale, F 
Achete, CA 

Abstract

We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities, for a given defect density, strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all excitations, the D to G intensity ratio reaches a maximum for an interdefect distance ∼3 nm. Thus, a given ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dispersion with excitation energy solves this ambiguity.

Description

Keywords

Graphene, defects, Raman spectroscopy, excitation energy, X-RAY-DIFFRACTION, SIZE L-A, AMORPHOUS-CARBON, GRAPHITE, SCATTERING, SPECTRA, INTERCALATION, 1ST-ORDER, DISORDER, DIAMOND

Journal Title

Nano Lett

Conference Name

Journal ISSN

1530-6984
1530-6992

Volume Title

11

Publisher

American Chemical Society (ACS)
Sponsorship
Engineering and Physical Sciences Research Council (EP/G042357/1)