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Graphene field-effect transistors as room-temperature terahertz detectors.

Accepted version
Peer-reviewed

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Type

Article

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Authors

Vicarelli, L 
Vitiello, MS 
Coquillat, D 
Ferrari, AC 

Abstract

The unique optoelectronic properties of graphene make it an ideal platform for a variety of photonic applications, including fast photodetectors, transparent electrodes in displays and photovoltaic modules, optical modulators, plasmonic devices, microcavities, and ultra-fast lasers. Owing to its high carrier mobility, gapless spectrum and frequency-independent absorption, graphene is a very promising material for the development of detectors and modulators operating in the terahertz region of the electromagnetic spectrum (wavelengths in the hundreds of micrometres), still severely lacking in terms of solid-state devices. Here we demonstrate terahertz detectors based on antenna-coupled graphene field-effect transistors. These exploit the nonlinear response to the oscillating radiation field at the gate electrode, with contributions of thermoelectric and photoconductive origin. We demonstrate room temperature operation at 0.3 THz, showing that our devices can already be used in realistic settings, enabling large-area, fast imaging of macroscopic samples.

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Keywords

Electrodes, Electromagnetic Fields, Graphite, Photons, Temperature, Transistors, Electronic

Journal Title

Nat Mater

Conference Name

Journal ISSN

1476-1122
1476-4660

Volume Title

11

Publisher

Springer Science and Business Media LLC
Sponsorship
Engineering and Physical Sciences Research Council (EP/G030480/1)
Engineering and Physical Sciences Research Council (EP/G042357/1)