Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images

Oliver, RA; Sumner, J; Kappers, MJ; Humphreys, CJ

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Authors

Oliver, RA

Sumner, J

Kappers, MJ

Humphreys, CJ

Publication Date

2009-09-01

Journal Title

J APPL PHYS

ISSN

0021-8979

Publisher

AIP Publishing

Volume

106

Issue

Type

Article

Metadata

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Citation

Oliver, R., Sumner, J., Kappers, M., & Humphreys, C. (2009). Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images. J APPL PHYS, 106 (5) https://doi.org/10.1063/1.3212971

Keywords

annealing, atomic force microscopy, gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, semiconductor epitaxial layers, semiconductor quantum wells, surface diffusion, vapour phase epitaxial growth, wide band gap semiconductors, THREADING DISLOCATIONS, GAN, GROWTH, WELLS

Sponsorship

Engineering and Physical Sciences Research Council (EP/E035167/1)

Engineering and Physical Sciences Research Council (EP/G042330/1)

Engineering and Physical Sciences Research Council (EP/H019324/1)

Identifiers

External DOI: https://doi.org/10.1063/1.3212971

This record's URL: https://www.repository.cam.ac.uk/handle/1810/286203

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http://www.rioxx.net/licenses/all-rights-reserved

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