Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images
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Authors
Oliver, RA
Sumner, J
Kappers, MJ
Humphreys, CJ
Publication Date
2009-09-01Journal Title
J APPL PHYS
ISSN
0021-8979
Publisher
AIP Publishing
Volume
106
Issue
5
Type
Article
Metadata
Show full item recordCitation
Oliver, R., Sumner, J., Kappers, M., & Humphreys, C. (2009). Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images. J APPL PHYS, 106 (5) https://doi.org/10.1063/1.3212971
Keywords
annealing, atomic force microscopy, gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, semiconductor epitaxial layers, semiconductor quantum wells, surface diffusion, vapour phase epitaxial growth, wide band gap semiconductors, THREADING DISLOCATIONS, GAN, GROWTH, WELLS
Sponsorship
Engineering and Physical Sciences Research Council (EP/E035167/1)
Engineering and Physical Sciences Research Council (EP/G042330/1)
Engineering and Physical Sciences Research Council (EP/H019324/1)
Identifiers
External DOI: https://doi.org/10.1063/1.3212971
This record's URL: https://www.repository.cam.ac.uk/handle/1810/286203
Rights
Licence:
http://www.rioxx.net/licenses/all-rights-reserved
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