Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images

Authors
Oliver, RA 
Sumner, J 
Kappers, MJ 
Humphreys, CJ 
DOI
https://doi.org/10.1063/1.3212971
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Type
Article
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Description
Publication Date
2009-09-01
Online Publication Date
Acceptance Date
Keywords
annealing, atomic force microscopy, gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, semiconductor epitaxial layers, semiconductor quantum wells, surface diffusion, vapour phase epitaxial growth, wide band gap semiconductors, THREADING DISLOCATIONS, GAN, GROWTH, WELLS
Journal Title
J APPL PHYS
Journal ISSN
0021-8979
1089-7550
Volume Title
106
Publisher
AIP Publishing
Rights
http://www.rioxx.net/licenses/all-rights-reserved
Sponsorship
Engineering and Physical Sciences Research Council (EP/E035167/1)
Engineering and Physical Sciences Research Council (EP/G042330/1)
Engineering and Physical Sciences Research Council (EP/H019324/1)
Collections
Cambridge University Research Outputs