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dc.contributor.authorSingh, Angadjit
dc.contributor.authorKamboj, Varun S
dc.contributor.authorLiu, Jieyi
dc.contributor.authorLlandro, Justin
dc.contributor.authorDuffy, Liam B
dc.contributor.authorSenanayak, Satyaprasad P
dc.contributor.authorBeere, Harvey E
dc.contributor.authorIonescu, Adrian
dc.contributor.authorRitchie, David A
dc.contributor.authorHesjedal, Thorsten
dc.contributor.authorBarnes, Crispin HW
dc.date.accessioned2018-12-12T00:31:56Z
dc.date.available2018-12-12T00:31:56Z
dc.date.issued2018-11-19
dc.identifier.issn2045-2322
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/286734
dc.description.abstractFerromagnetic ordering in a topological insulator can break time-reversal symmetry, realizing dissipationless electronic states in the absence of a magnetic field. The control of the magnetic state is of great importance for future device applications. We provide a detailed systematic study of the magnetic state in highly doped CrxSb2-xTe3 thin films using electrical transport, magneto-optic Kerr effect measurements and terahertz time domain spectroscopy, and also report an efficient electric gating of ferromagnetic order using the electrolyte ionic liquid [DEME][TFSI]. Upon increasing the Cr concentration from x = 0.15 to 0.76, the Curie temperature (Tc) was observed to increase by ~5 times to 176 K. In addition, it was possible to modify the magnetic moment by up to 50% with a gate bias variation of just ±3 V, which corresponds to an increase in carrier density by 50%. Further analysis on a sample with x = 0.76 exhibits a clear insulator-metal transition at Tc, indicating the consistency between the electrical and optical measurements. The direct correlation obtained between the carrier density and ferromagnetism - in both electrostatic and chemical doping - using optical and electrical means strongly suggests a carrier-mediated Ruderman-Kittel-Kasuya-Yoshida (RKKY) coupling scenario. Our low-voltage means of manipulating ferromagnetism, and consistency in optical and electrical measurements provides a way to realize exotic quantum states for spintronic and low energy magneto-electronic device applications.
dc.format.mediumElectronic
dc.languageeng
dc.publisherSpringer Science and Business Media LLC
dc.rightsAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.titleSystematic Study of Ferromagnetism in CrxSb2-xTe3 Topological Insulator Thin Films using Electrical and Optical Techniques.
dc.typeArticle
prism.issueIdentifier1
prism.publicationDate2018
prism.publicationNameSci Rep
prism.startingPage17024
prism.volume8
dc.identifier.doi10.17863/CAM.34041
dcterms.dateAccepted2018-10-27
rioxxterms.versionofrecord10.1038/s41598-018-35118-8
rioxxterms.versionVoR
rioxxterms.licenseref.urihttp://creativecommons.org/licenses/by/4.0/
rioxxterms.licenseref.startdate2018-11-19
dc.contributor.orcidSingh, Angadjit [0000-0003-4922-4956]
dc.contributor.orcidLlandro, Justin [0000-0002-1362-6083]
dc.contributor.orcidRitchie, David A [0000-0002-9844-8350]
dc.contributor.orcidHesjedal, Thorsten [0000-0001-7947-3692]
dc.identifier.eissn2045-2322
dc.publisher.urlhttp://nature.com/
rioxxterms.typeJournal Article/Review
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/J00412X/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/K503757/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/J017671/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/P021859/1)
cam.issuedOnline2018-11-19


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Attribution 4.0 International
Except where otherwise noted, this item's licence is described as Attribution 4.0 International