Monolayer optical memory cells based on artificial trap-mediated charge storage and release.
Morris, Stephen M
Springer Science and Business Media LLC
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Lee, J., Pak, S., Lee, Y., Cho, Y., Hong, J., Giraud, P., Shin, H. S., et al. (2017). Monolayer optical memory cells based on artificial trap-mediated charge storage and release.. Nat Commun, 8 14734. https://doi.org/10.1038/ncomms14734
Monolayer transition metal dichalcogenides are considered to be promising candidates for flexible and transparent optoelectronics applications due to their direct bandgap and strong light-matter interactions. Although several monolayer-based photodetectors have been demonstrated, single-layered optical memory devices suitable for high-quality image sensing have received little attention. Here we report a concept for monolayer MoS2 optoelectronic memory devices using artificially-structured charge trap layers through the functionalization of the monolayer/dielectric interfaces, leading to localized electronic states that serve as a basis for electrically-induced charge trapping and optically-mediated charge release. Our devices exhibit excellent photo-responsive memory characteristics with a large linear dynamic range of ∼4,700 (73.4 dB) coupled with a low OFF-state current (<4 pA), and a long storage lifetime of over 104 s. In addition, the multi-level detection of up to 8 optical states is successfully demonstrated. These results represent a significant step toward the development of future monolayer optoelectronic memory devices.
European Research Council (340538)
External DOI: https://doi.org/10.1038/ncomms14734
This record's URL: https://www.repository.cam.ac.uk/handle/1810/286915
Attribution 4.0 International
Licence URL: https://creativecommons.org/licenses/by/4.0/