Monolayer optical memory cells based on artificial trap-mediated charge storage and release.
Morris, Stephen M
Kim, Jong Min
Springer Science and Business Media LLC
MetadataShow full item record
Lee, J., Pak, S., Lee, Y., Cho, Y., Hong, J., Giraud, P., Shin, H. S., et al. (2017). Monolayer optical memory cells based on artificial trap-mediated charge storage and release.. Nat Commun, 8 14734. https://doi.org/10.1038/ncomms14734
Monolayer transition metal dichalcogenides are considered to be promising candidates for flexible and transparent optoelectronics applications due to their direct bandgap and strong light-matter interactions. Although several monolayer-based photodetectors have been demonstrated, single-layered optical memory devices suitable for high-quality image sensing have received little attention. Here we report a concept for monolayer MoS2 optoelectronic memory devices using artificially-structured charge trap layers through the functionalization of the monolayer/dielectric interfaces, leading to localized electronic states that serve as a basis for electrically-induced charge trapping and optically-mediated charge release. Our devices exhibit excellent photo-responsive memory characteristics with a large linear dynamic range of ∼4,700 (73.4 dB) coupled with a low OFF-state current (<4 pA), and a long storage lifetime of over 104 s. In addition, the multi-level detection of up to 8 optical states is successfully demonstrated. These results represent a significant step toward the development of future monolayer optoelectronic memory devices.
0205 Optical Physics
European Research Council (340538)
External DOI: https://doi.org/10.1038/ncomms14734
This record's URL: https://www.repository.cam.ac.uk/handle/1810/286915
Attribution 4.0 International
Licence URL: https://creativecommons.org/licenses/by/4.0/
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