Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires.
Sohn, Jung Inn
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Giraud, P., Hou, B., Pak, S., Sohn, J. I., Morris, S., Cha, S., & Kim, J. (2018). Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires.. Nanotechnology, 29 (7), 075202. https://doi.org/10.1088/1361-6528/aaa2e6
We demonstrate the fabrication of solution processed highly crystalline p-type PbS nanowires via the oriented attachment of nanoparticles. The analysis of single nanowire field effect transistor (FET) devices revealed a hole conduction behaviour with average mobilities greater than 30 cm2 V-1 s-1, which is an order of magnitude higher than that reported to date for p-type PbS colloidal nanowires. We have investigated the response of the FETs to near-infrared light excitation and show herein that the nanowires exhibited gate-dependent photo-conductivities, enabling us to tune the device performances. The responsivity was found to be greater than 104 A W-1 together with a detectivity of 1013 Jones, which benefits from a photogating effect occurring at negative gate voltages. These encouraging detection parameters are accompanied by relatively short switching times of 15 ms at positive gate voltages, resulting from a combination of the standard photoconduction and the high crystallinity of the nanowires. Collectively, these results indicate that solution-processed PbS nanowires are promising nanomaterials for infrared photodetectors as well as p-type nanowire FETs.
European Research Council (340538)
European Commission Horizon 2020 (H2020) Research Infrastructures (RI) (685758)
External DOI: https://doi.org/10.1088/1361-6528/aaa2e6
This record's URL: https://www.repository.cam.ac.uk/handle/1810/286917
Attribution 4.0 International
Licence URL: https://creativecommons.org/licenses/by/4.0/