Temperature Evolution in Nanoscale Carbon-Based Memory Devices Due to Local Joule Heating
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© 2002-2012 IEEE. Tetrahedral amorphous (ta-C) carbon-based memory devices have recently gained traction due to their good scalability and promising properties like nanosecond switching speeds. However, cycling endurance is still a key challenge. In this paper, we present a model that takes local fluctuations in sp 2 and sp 3 content into account when describing the conductivity of ta-C memory devices. We present a detailed study of the conductivity of ta-C memory devices ranging from ohmic behavior at low electric fields to dielectric breakdown. The study consists of pulsed switching experiments and device-scale simulations, which allows us for the first time to provide insights into the local temperature distribution at the onset of memory switching.
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1941-0085
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European Commission (284558)
European Commission (309980)
European Commission (604391)
Engineering and Physical Sciences Research Council (EP/L016087/1)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (696656)
EPSRC (via University of Manchester) (R119256)
Royal Society of Chemistry (unknown)
European Research Council (319277)