Low inductance switching for SiC MOSFET based power circuit
Accepted version
Peer-reviewed
Repository URI
Repository DOI
Change log
Authors
Shelton, E
Zhang, X
Zhang, T
Hari, N
Palmer, P
Description
Keywords
Wide band gap semiconductors, Silicon carbide, MOSFET, Measurement, Gate Drive
Journal Title
2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017
Conference Name
2017 IEEE Energy Conversion Congress and Exposition (ECCE)
Journal ISSN
2329-3721
Volume Title
2017-January
Publisher
IEEE
Publisher DOI
Sponsorship
Engineering and Physical Sciences Research Council (EP/L021579/1)