Low inductance switching for SiC MOSFET based power circuit

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Authors
Shelton, E
Zhang, X
Zhang, T
Hari, N
Palmer, P
Publication Date
2017
Journal Title
2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017
Conference Name
2017 IEEE Energy Conversion Congress and Exposition (ECCE)
ISSN
2329-3721
ISBN
9781509029983
Publisher
IEEE
Volume
2017-January
Pages
5093-5100
Type
Conference Object
This Version
AM
Metadata
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Citation
Shelton, E., Zhang, X., Zhang, T., Hari, N., & Palmer, P. (2017). Low inductance switching for SiC MOSFET based power circuit. 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017, 2017-January 5093-5100. https://doi.org/10.1109/ECCE.2017.8096858
Keywords
Wide band gap semiconductors, Silicon carbide, MOSFET, Measurement, Gate Drive
Sponsorship
Engineering and Physical Sciences Research Council (EP/L021579/1)
Identifiers
External DOI: https://doi.org/10.1109/ECCE.2017.8096858
This record's URL: https://www.repository.cam.ac.uk/handle/1810/286925
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Licence:
http://www.rioxx.net/licenses/all-rights-reserved
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