SiC MOSFETs connected in series with active voltage control
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Authors
Palmer, PR
Zhang, J
Zhang, X
Publication Date
2015Journal Title
WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications
Conference Name
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
ISBN
9781467378857
Publisher
IEEE
Pages
60-65
Type
Conference Object
This Version
AM
Metadata
Show full item recordCitation
Palmer, P., Zhang, J., & Zhang, X. (2015). SiC MOSFETs connected in series with active voltage control. WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 60-65. https://doi.org/10.1109/WiPDA.2015.7369274
Keywords
MOSFET, SiC, Gate Drive, IGBT, Active Voltage Control
Sponsorship
Engineering and Physical Sciences Research Council (EP/L021579/1)
Identifiers
External DOI: https://doi.org/10.1109/WiPDA.2015.7369274
This record's URL: https://www.repository.cam.ac.uk/handle/1810/286927
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http://www.rioxx.net/licenses/all-rights-reserved
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