Physics-based insulated-gate bipolar transistor model with input capacitance correction
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Authors
Yang, X
Otsuki, M
Palmer, PR
Publication Date
2015Journal Title
IET Power Electronics
ISSN
1755-4535
Publisher
Institution of Engineering and Technology (IET)
Volume
8
Issue
3
Pages
417-427
Type
Article
This Version
AM
Metadata
Show full item recordCitation
Yang, X., Otsuki, M., & Palmer, P. (2015). Physics-based insulated-gate bipolar transistor model with input capacitance correction. IET Power Electronics, 8 (3), 417-427. https://doi.org/10.1049/iet-pel.2014.0169
Identifiers
External DOI: https://doi.org/10.1049/iet-pel.2014.0169
This record's URL: https://www.repository.cam.ac.uk/handle/1810/286985
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http://www.rioxx.net/licenses/all-rights-reserved
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