Physics-based insulated-gate bipolar transistor model with input capacitance correction

Yang, X; Otsuki, M; Palmer, PR

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Authors

Yang, X

Otsuki, M

Palmer, PR

Publication Date

2015

Journal Title

IET Power Electronics

ISSN

1755-4535

Publisher

Institution of Engineering and Technology (IET)

Volume

Issue

Pages

417-427

Type

Article

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Citation

Yang, X., Otsuki, M., & Palmer, P. (2015). Physics-based insulated-gate bipolar transistor model with input capacitance correction. IET Power Electronics, 8 (3), 417-427. https://doi.org/10.1049/iet-pel.2014.0169

Identifiers

External DOI: https://doi.org/10.1049/iet-pel.2014.0169

This record's URL: https://www.repository.cam.ac.uk/handle/1810/286985

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