Physics-based insulated-gate bipolar transistor model with input capacitance correction
| dc.contributor.author | Yang, X | |
| dc.contributor.author | Otsuki, M | |
| dc.contributor.author | Palmer, Patrick | |
| dc.date.accessioned | 2018-12-15T00:30:28Z | |
| dc.date.available | 2018-12-15T00:30:28Z | |
| dc.date.issued | 2015-03 | |
| dc.identifier.issn | 1755-4535 | |
| dc.identifier.uri | https://www.repository.cam.ac.uk/handle/1810/286985 | |
| dc.publisher | Institution of Engineering and Technology (IET) | |
| dc.title | Physics-based insulated-gate bipolar transistor model with input capacitance correction | |
| dc.type | Article | |
| prism.endingPage | 427 | |
| prism.issueIdentifier | 3 | |
| prism.publicationDate | 2015 | |
| prism.publicationName | IET Power Electronics | |
| prism.startingPage | 417 | |
| prism.volume | 8 | |
| dc.identifier.doi | 10.17863/CAM.34294 | |
| rioxxterms.versionofrecord | 10.1049/iet-pel.2014.0169 | |
| rioxxterms.version | AM | |
| rioxxterms.licenseref.uri | http://www.rioxx.net/licenses/all-rights-reserved | |
| rioxxterms.licenseref.startdate | 2015-01-01 | |
| dc.identifier.eissn | 1755-4543 | |
| rioxxterms.type | Journal Article/Review | |
| cam.issuedOnline | 2015-03 | |
| rioxxterms.freetoread.startdate | 2016-01-01 |
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