Physics-based insulated-gate bipolar transistor model with input capacitance correction
Accepted version
Peer-reviewed
Repository URI
Repository DOI
Change log
Authors
Yang, X
Otsuki, M
Palmer, PR
Description
Keywords
40 Engineering, 4008 Electrical Engineering, 4009 Electronics, Sensors and Digital Hardware
Journal Title
IET Power Electronics
Conference Name
Journal ISSN
1755-4535
1755-4543
1755-4543
Volume Title
8
Publisher
Institution of Engineering and Technology (IET)