Dirac-Point Shift by Carrier Injection Barrier in Graphene Field-Effect Transistor Operation at Room Temperature.
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Authors
Nathan, Arokia
Sagade, Abhay A
Lu, Haichang
Hasko, David
Robertson, John
Publication Date
2018-04-04Journal Title
ACS Appl Mater Interfaces
ISSN
1944-8244
Publisher
American Chemical Society (ACS)
Volume
10
Issue
13
Pages
10618-10621
Language
eng
Type
Article
This Version
AM
Physical Medium
Print-Electronic
Metadata
Show full item recordCitation
Lee, S., Nathan, A., Alexander-Webber, J., Braeuninger-Weimer, P., Sagade, A. A., Lu, H., Hasko, D., et al. (2018). Dirac-Point Shift by Carrier Injection Barrier in Graphene Field-Effect Transistor Operation at Room Temperature.. ACS Appl Mater Interfaces, 10 (13), 10618-10621. https://doi.org/10.1021/acsami.8b02294
Abstract
A positive shift in the Dirac point in graphene field-effect transistors was observed with Hall-effect measurements coupled with Kelvin-probe measurements at room temperature. This shift can be explained by the asymmetrical behavior of the contact resistance by virtue of the electron injection barrier at the source contact. As an outcome, an intrinsic resistance is given to allow a retrieval of an intrinsic carrier mobility found to be decreased with increasing gate bias, suggesting the dominance of short-range scattering in a single-layer graphene field-effect transistor. These results analytically correlate the field-effect parameters with intrinsic graphene properties.
Sponsorship
Engineering and Physical Sciences Research Council (EP/K016636/1)
Identifiers
External DOI: https://doi.org/10.1021/acsami.8b02294
This record's URL: https://www.repository.cam.ac.uk/handle/1810/286987
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