The Over-Reset Phenomenon in Ta<inf>2</inf>O<inf>5</inf> RRAM Device Investigated by the RTN-Based Defect Probing Technique

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dc.contributor.authorChai, Z
dc.contributor.authorZhang, W
dc.contributor.authorFreitas, P
dc.contributor.authorHatem, F
dc.contributor.authorZhang, JF
dc.contributor.authorMarsland, J
dc.contributor.authorGovoreanu, B
dc.contributor.authorGoux, L
dc.contributor.authorKar, GS
dc.contributor.authorHall, S
dc.contributor.authorChalker, P
dc.contributor.authorRobertson, John
dc.date.accessioned2018-12-18T00:32:52Z
dc.date.available2018-12-18T00:32:52Z
dc.date.issued2018-07
dc.identifier.issn0741-3106
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/287112
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.titleThe Over-Reset Phenomenon in Ta<inf>2</inf>O<inf>5</inf> RRAM Device Investigated by the RTN-Based Defect Probing Technique
dc.typeArticle
prism.endingPage958
prism.issueIdentifier7
prism.publicationDate2018
prism.publicationNameIEEE Electron Device Letters
prism.startingPage955
prism.volume39
dc.identifier.doi10.17863/CAM.34421
rioxxterms.versionofrecord10.1109/LED.2018.2833149
rioxxterms.versionAM
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserved
rioxxterms.licenseref.startdate2018-07-01
dc.contributor.orcidChai, Z [0000-0003-3446-7138]
dc.contributor.orcidZhang, W [0000-0003-4600-7382]
dc.contributor.orcidFreitas, P [0000-0002-1338-1450]
dc.contributor.orcidHatem, F [0000-0003-1154-6335]
dc.contributor.orcidZhang, JF [0000-0003-4987-6428]
dc.contributor.orcidHall, S [0000-0001-8387-1036]
dc.contributor.orcidChalker, P [0000-0002-2295-6332]
dc.identifier.eissn1558-0563
rioxxterms.typeJournal Article/Review
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/M009297/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/P005152/1)
rioxxterms.freetoread.startdate2019-07-01


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