The Over-Reset Phenomenon in Ta<inf>2</inf>O<inf>5</inf> RRAM Device Investigated by the RTN-Based Defect Probing Technique

The Over-Reset Phenomenon in Ta2O5 RRAM Device Investigated by the RTN-Based Defect Probing Technique

Accepted version

Peer-reviewed

Repository URI

https://www.repository.cam.ac.uk/handle/1810/287112

Repository DOI

https://doi.org/10.17863/CAM.34421

Files

Accepted version (1.02 MB)

Type

Article

Authors

Chai, Z

https://orcid.org/0000-0003-3446-7138

Zhang, W

https://orcid.org/0000-0003-4600-7382

Freitas, P

https://orcid.org/0000-0002-1338-1450

Hatem, F

https://orcid.org/0000-0003-1154-6335

Zhang, JF

https://orcid.org/0000-0003-4987-6428

Keywords

Resistive switching, RRAM, over-reset, defect profile, random telegraph noise, Ta2O5, HfO2

Journal Title

IEEE Electron Device Letters

Journal ISSN

0741-3106
1558-0563

Volume Title

39

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publisher DOI

https://doi.org/10.1109/LED.2018.2833149

Rights

http://www.rioxx.net/licenses/all-rights-reserved

Sponsorship

Engineering and Physical Sciences Research Council (EP/M009297/1)
Engineering and Physical Sciences Research Council (EP/P005152/1)

Collections

Cambridge University Research Outputs