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dc.contributor.authorPurdie, DG
dc.contributor.authorPugno, NM
dc.contributor.authorTaniguchi, T
dc.contributor.authorWatanabe, K
dc.contributor.authorFerrari, Andrea
dc.contributor.authorLombardo, Antonio
dc.date.accessioned2019-01-08T00:30:44Z
dc.date.available2019-01-08T00:30:44Z
dc.date.issued2018-12-19
dc.identifier.issn2041-1723
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/287597
dc.description.abstractHeterostructures formed by stacking layered materials require atomically clean interfaces. However, contaminants are usually trapped between the layers, aggregating into randomly located blisters, incompatible with scalable fabrication processes. Here we report a process to remove blisters from fully formed heterostructures. Our method is over an order of magnitude faster than those previously reported and allows multiple interfaces to be cleaned simultaneously. We fabricate blister-free regions of graphene encapsulated in hexagonal boron nitride with an area ~ 5000 μm2, achieving mobilities up to 180,000 cm2 V-1 s-1 at room temperature, and 1.8 × 106 cm2 V-1 s-1 at 9 K. We also assemble heterostructures using graphene intentionally exposed to polymers and solvents. After cleaning, these samples reach similar mobilities. This demonstrates that exposure of graphene to process-related contaminants is compatible with the realization of high mobility samples, paving the way to the development of wafer-scale processes for the integration of layered materials in (opto)electronic devices.
dc.format.mediumElectronic
dc.languageeng
dc.publisherSpringer Science and Business Media LLC
dc.rightsAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.titleCleaning interfaces in layered materials heterostructures.
dc.typeArticle
prism.issueIdentifier1
prism.publicationDate2018
prism.publicationNameNat Commun
prism.startingPage5387
prism.volume9
dc.identifier.doi10.17863/CAM.34910
dcterms.dateAccepted2018-11-05
rioxxterms.versionofrecord10.1038/s41467-018-07558-3
rioxxterms.versionVoR
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserved
rioxxterms.licenseref.startdate2018-12-19
dc.contributor.orcidWatanabe, K [0000-0003-3701-8119]
dc.contributor.orcidFerrari, Andrea [0000-0003-0907-9993]
dc.contributor.orcidLombardo, Antonio [0000-0003-3088-6458]
dc.identifier.eissn2041-1723
dc.publisher.urlhttp://dx.doi.org/10.1038/s41467-018-07558-3
rioxxterms.typeJournal Article/Review
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/K01711X/1)
pubs.funder-project-idEuropean Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (696656)
pubs.funder-project-idRoyal Society (TG102524)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/K017144/1)
pubs.funder-project-idEuropean Commission (604391)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/L016087/1)
pubs.funder-project-idEPSRC (via University of Manchester) (R119256)
pubs.funder-project-idRoyal Society of Chemistry (unknown)
pubs.funder-project-idEuropean Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (785219)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/G042357/1)
pubs.funder-project-idThe Royal Society (wm090070)
pubs.funder-project-idIsaac Newton Trust (1135(N))
pubs.funder-project-idEuropean Commission (246026)
pubs.funder-project-idEuropean Research Council (319277)
pubs.funder-project-idEuropean Commission (314578)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/P02081X/1)
pubs.funder-project-idEuropean Commission (264694)
pubs.funder-project-idEuropean Commission (309980)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/M507799/1)
cam.issuedOnline2018-12-19


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Attribution 4.0 International
Except where otherwise noted, this item's licence is described as Attribution 4.0 International