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dc.contributor.authorDhara, Soumenen
dc.contributor.authorLynch, Stephenen
dc.contributor.authorNiang, Kham Manen
dc.contributor.authorFlewitt, Andrewen
dc.contributor.authorNathan, Arokiaen
dc.date.accessioned2019-01-30T00:31:19Z
dc.date.available2019-01-30T00:31:19Z
dc.identifier.issn1077-3118
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/288518
dc.description.abstractDefects in semiconductor thin-films often leave optical spectral signatures that can be used for their identification. In this letter, we report on spectrally resolved photoconductivity measurements of amorphous oxide semiconductor thin-film transistors. In contrast to previously reported photoconductive spectroscopy measurements recorded using spectrally filtered broadband light sources, we used a wavelength tunable picosecond laser to illuminate the thin-film. We extracted the absorption coeficient as a function of wavelength from the photocurrent measurement and showed that it followed the typical characteristic behaviour previously reported for amorphous oxide semiconductor thin-films. However, in addition, we observed several sharp spectral peaks in the photoconductivity spectrum which can be associated with sub-bandgap defects. These enhanced peaks are not normally visible in previously reported photoconductivity spectra. Furthermore, we show that we can control the sensitivity of our measurement by changing the applied gate bias voltage when the thin-films were fabricated into transistors. The enhancement achieved by using the wavelength tunable laser makes this a particularly sensitive characterisation tool and can additionally be used to discriminate between defects which have been incorporated after device fabrication.
dc.publisherAIP
dc.titlePhotoconductive Laser Spectroscopy as a Method to Enhance Defect Spectral Signatures in Amorphous Oxide Semiconductor Thin-film Transistorsen
dc.typeArticle
prism.issueIdentifier1en
prism.number011907en
prism.publicationNameApplied Physics Lettersen
prism.volume114en
dc.identifier.doi10.17863/CAM.35804
dcterms.dateAccepted2018-12-18en
rioxxterms.versionofrecord10.1063/1.5070141en
rioxxterms.versionAM
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserveden
rioxxterms.licenseref.startdate2018-12-18en
dc.contributor.orcidNiang, Kham Man [0000-0001-5488-6087]
dc.contributor.orcidFlewitt, Andrew [0000-0003-4204-4960]
dc.identifier.eissn1077-3118
rioxxterms.typeJournal Article/Reviewen
pubs.funder-project-idEPSRC (EP/M013650/1)
cam.issuedOnline2019-01-11en
dc.identifier.urlhttps://aip.scitation.org/doi/10.1063/1.5070141en
rioxxterms.freetoread.startdate2022-01-29


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