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dc.contributor.authorWang, Ruizhi
dc.contributor.authorPurdie, David G
dc.contributor.authorFan, Ye
dc.contributor.authorMassabuau, Fabien
dc.contributor.authorBraeuninger-Weimer, Philipp
dc.contributor.authorBurton, Oliver
dc.contributor.authorBlume, Raoul
dc.contributor.authorSchloegl, Robert
dc.contributor.authorLombardo, Antonio
dc.contributor.authorWeatherup, Robert
dc.contributor.authorHofmann, Stephan
dc.date.accessioned2019-02-08T00:32:20Z
dc.date.available2019-02-08T00:32:20Z
dc.date.issued2019-02-26
dc.identifier.issn1936-0851
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/288965
dc.description.abstractHexagonal boron nitride (h-BN) is the only known material aside from graphite with a structure composed of simple, stable, noncorrugated atomically thin layers. While historically used as a lubricant in powder form, h-BN layers have become particularly attractive as an ultimately thin insulator, barrier, or encapsulant. Practically all emerging electronic and photonic device concepts currently rely on h-BN exfoliated from small bulk crystallites, which limits device dimensions and process scalability. We here focus on a systematic understanding of Pt-catalyzed h-BN crystal formation, in order to address this integration challenge for monolayer h-BN via an integrated chemical vapor deposition (CVD) process that enables h-BN crystal domain sizes exceeding 0.5 mm and a merged, continuous layer in a growth time of less than 45 min. The process makes use of commercial, reusable Pt foils and allows a delamination process for easy and clean h-BN layer transfer. We demonstrate sequential pick-up for the assembly of graphene/h-BN heterostructures with atomic layer precision, while minimizing interfacial contamination. The approach can be readily combined with other layered materials and enables the integration of CVD h-BN into high-quality, reliable 2D material device layer stacks.
dc.format.mediumPrint-Electronic
dc.languageeng
dc.publisherAmerican Chemical Society (ACS)
dc.titleA Peeling Approach for Integrated Manufacturing of Large Monolayer h-BN Crystals.
dc.typeArticle
prism.endingPage2126
prism.issueIdentifier2
prism.publicationDate2019
prism.publicationNameACS Nano
prism.startingPage2114
prism.volume13
dc.identifier.doi10.17863/CAM.36228
dcterms.dateAccepted2019-01-14
rioxxterms.versionofrecord10.1021/acsnano.8b08712
rioxxterms.versionAM
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserved
rioxxterms.licenseref.startdate2019-02
dc.contributor.orcidWang, Ruizhi [0000-0002-3914-8649]
dc.contributor.orcidFan, Ye [0000-0003-0998-5881]
dc.contributor.orcidMassabuau, Fabien [0000-0003-1008-1652]
dc.contributor.orcidBraeuninger-Weimer, Philipp [0000-0001-8677-1647]
dc.contributor.orcidBurton, Oliver [0000-0002-2060-1714]
dc.contributor.orcidLombardo, Antonio [0000-0003-3088-6458]
dc.contributor.orcidWeatherup, Robert [0000-0002-3993-9045]
dc.contributor.orcidHofmann, Stephan [0000-0001-6375-1459]
dc.identifier.eissn1936-086X
rioxxterms.typeJournal Article/Review
pubs.funder-project-idEuropean Research Council (279342)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/M507751/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/P00945X/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/K016636/1)
pubs.funder-project-idEuropean Commission Horizon 2020 (H2020) Marie Sk?odowska-Curie actions (656870)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/L016087/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/M506485/1)
cam.issuedOnline2019-01-23
rioxxterms.freetoread.startdate2020-01-14


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