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dc.contributor.authorJiang, Chen
dc.contributor.authorChoi, Hyung Woo
dc.contributor.authorCheng, Xiang
dc.contributor.authorMa, Hanbin
dc.contributor.authorHasko, David
dc.contributor.authorNathan, Arokia
dc.date.accessioned2019-02-16T00:31:34Z
dc.date.available2019-02-16T00:31:34Z
dc.date.issued2019-02-15
dc.identifier.issn0036-8075
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/289548
dc.description.abstractOvercoming the trade-offs among power consumption, fabrication cost, and signal amplification has been a long-standing issue for wearable electronics. We report a high-gain, fully inkjet-printed Schottky barrier organic thin-film transistor amplifier circuit. The transistor signal amplification efficiency is 38.2 siemens per ampere, which is near the theoretical thermionic limit, with an ultralow power consumption of <1 nanowatt. The use of a Schottky barrier for the source gave the transistor geometry-independent electrical characteristics and accommodated the large dimensional variation in inkjet-printed features. These transistors exhibited good reliability with negligible threshold-voltage shift. We demonstrated this capability with an ultralow-power high-gain amplifier for the detection of electrophysiological signals and showed a signal-to-noise ratio of >60 decibels and noise voltage of <0.3 microvolt per hertz1/2 at 100 hertz.
dc.description.sponsorshipEPSRC, EC, China Scholarship Council, IEEE Electron Device Society
dc.format.mediumPrint
dc.languageeng
dc.publisherAmerican Association for the Advancement of Science (AAAS)
dc.titlePrinted subthreshold organic transistors operating at high gain and ultralow power.
dc.typeArticle
prism.endingPage723
prism.issueIdentifier6428
prism.publicationDate2019
prism.publicationNameScience
prism.startingPage719
prism.volume363
dc.identifier.doi10.17863/CAM.36798
dcterms.dateAccepted2019-01-15
rioxxterms.versionofrecord10.1126/science.aav7057
rioxxterms.versionAM
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserved
rioxxterms.licenseref.startdate2019-02
dc.contributor.orcidJiang, Chen [0000-0002-6806-5324]
dc.contributor.orcidChoi, Hyung Woo [0000-0002-5460-5860]
dc.contributor.orcidMa, Hanbin [0000-0002-7629-2287]
dc.contributor.orcidHasko, David [0000-0003-4612-8694]
dc.contributor.orcidNathan, Arokia [0000-0002-2070-8853]
dc.identifier.eissn1095-9203
rioxxterms.typeJournal Article/Review
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/M013650/1)
pubs.funder-project-idEuropean Commission Horizon 2020 (H2020) Marie Sk?odowska-Curie actions (645760)
pubs.funder-project-idEuropean Commission Horizon 2020 (H2020) Research Infrastructures (RI) (685758)
pubs.funder-project-idEuropean Commission Horizon 2020 (H2020) Research Infrastructures (RI) (692373)


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